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Volumn 245, Issue 5, 2008, Pages 868-872

Electrical properties of InGaN grown by molecular beam epitaxy

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EID: 55549097499 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.200778710 Document Type: Conference Paper

Times cited : (13)

References (12)

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