In-plane photovoltage measurements on MBE grown InN

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 473-485

  Tiras, E ^a   Zanato, D ^b   Mazzucato, S ^c   Balkan, N ^b   Schaff, W J ^d  

^a HACETTEPE UNIVERSITY   (Turkey)

^b UNIVERSITY OF ESSEX   (United Kingdom)

^c UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

^d Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; THERMAL EFFECTS;

CONDUCTION BANDS; IN-PLANE PHOTOVOLTAGE (IPV); INN; TEMPERATURE DEPENDENCE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 9944228139     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.10.003     Document Type: Article

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