A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs

Microelectronics Journal

Volumn 40, Issue 3, 2009, Pages 413-417

  Lisesivdin, S B ^a,b   Balkan, N ^a   Ozbay, E ^c  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b GAZI UNIVERSITY   (Turkey)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

HEMT; Mixed conduction; MODFET; Multi carrier; Parallel conduction; QMSA

Indexed keywords

COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRON GAS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MAGNETIC FIELDS; SEMICONDUCTING GALLIUM; SPECTRUM ANALYZERS; TWO DIMENSIONAL ELECTRON GAS;

HEMT; MIXED CONDUCTION; MODFET; MULTI-CARRIER; PARALLEL CONDUCTION; QMSA;

GALLIUM ALLOYS;

EID: 61349102424     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.006     Document Type: Article

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