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Materials Science in Semiconductor Processing

Volumn 16, Issue 1, 2013, Pages 83-88

Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

(5) Ozturk, Mustafa K a Arslan, Engin b Kars, Ilknur a Ozcelik, Suleyman a Ozbay, Ekmel b

a GAZI UNIVERSITY (Turkey)

b BILKENT UNIVERSITY (Turkey)

Author keywords

AlN layer; GaN; MOCVD; Nitridation; Silicon substrates; Strain

Indexed keywords

ALN LAYERS; BIAXIAL STRAINS; BUFFER LAYER THICKNESS; GAN; GAN EPITAXIAL LAYERS; GAN FILM; GROWTH CONDITIONS; GROWTH TIME; HIGH-RESOLUTION X-RAY DIFFRACTION; HYDROSTATIC COMPONENTS; NITRIDATION TIME; NONUNIFORMITY; OUT-OF-PLANE; PRECISE MEASUREMENTS; SI(111) SUBSTRATE; SILICON SUBSTRATES; STRAIN ANALYSIS; TOTAL STRAIN;

FILM GROWTH; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDATION; SILICON; SILICON NITRIDE; STRAIN; VAPORS; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84870433562 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2012.06.013 Document Type: Article

Times cited : (26)

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