Conductive and crack-free AlN/GaN:Si distributed Bragg reflectors grown on 6H-SiC(0 0 0 1)

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 355-360

  Ive, T ^a   Brandt, O ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Nitrides; Interfaces

Indexed keywords

ALUMINUM NITRIDE; CRACKS; ELECTRIC CONDUCTANCE; GALLIUM NITRIDE; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS;

DISTRIBUTED BRAGG REFLECTORS (DBR); HETEROINTERFACES; ROOM TEMPERATURE; VERTICAL-CAVITY SURFACE EMITTING LASERS;

MIRRORS;

EID: 18444372077     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.048     Document Type: Conference Paper

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