The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(1 1 1) substrates by MOCVD

Current Applied Physics

Volumn 9, Issue 2, 2009, Pages 472-477

  Arslan, Engin ^a   Ozturk, Mustafa K ^b   Ozcelik, Suleyman ^b   Ozbay, Ekmel ^a  

^a Nanotechnology Research Center   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

A3. MOCVD; B1. AlN layer; B1. GaN; B1. Intermediate layer; B1. Silicon substrates; B1. Step graded AlGaN

Indexed keywords

CRACKING (CHEMICAL); CRYSTALLINE MATERIALS; DIFFRACTION; EMISSION SPECTROSCOPY; EPILAYERS; EPITAXIAL FILMS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITRIDATION; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; WAVEGUIDES; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

A3. MOCVD; B1. ALN LAYER; B1. GAN; B1. INTERMEDIATE LAYER; B1. SILICON SUBSTRATES; B1. STEP GRADED ALGAN;

GALLIUM ALLOYS;

EID: 55049124964     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.04.008     Document Type: Article

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