Silicon - A new substrate for GaN growth

Bulletin of Materials Science

Volumn 27, Issue 6, 2004, Pages 501-504

  Pal, S ^a   Jacob, C ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Devices; Epitaxial growth; GaN; MOCVD

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; POWER ELECTRONICS; SILICON CARBIDE; SUBSTRATES;

BUFFER LAYERS; LATTICE MISMATCH; THERMAL MISMATCH;

GALLIUM NITRIDE;

EID: 10944248772     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02707276     Document Type: Review

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