Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/ β-Si3N4(0001) double-buffer structure

Applied Physics Letters

Volumn 83, Issue 22, 2003, Pages 4530-4532

  Wu, Chung Lin ^a   Wang, Jhih Chun ^a   Chan, Meng Hsuan ^a   Chen, Tom T ^a   Gwo, Shangjr ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON WAFERS;

AUTODOPING EFFECTS; HETEROEPITAXY; LATTICE MISMATCH;

GALLIUM NITRIDE;

EID: 0346846599     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629384     Document Type: Article

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