The structural properties of GaN grown on Si substrates by using various annealing conditions for the AlN buffer layers

Journal of the Korean Physical Society

Volumn 48, Issue 6, 2006, Pages 1255-1258

  Shin, D H ^a   Bae, M K ^a   Yi, S N ^a   Na, J H ^b   Green, A M ^b   Taylor, R A ^b   Cho, Y J ^c   Cho, H M ^c   Park, S H ^d  

^a Korea Maritime University   (South Korea)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c Korea Research Institute of Standards and Science   (South Korea)

^d Catholic University of Daegu   (South Korea)

Author keywords

AlN; GaN; HVPE; Si(111)

Indexed keywords

EID: 33746099674     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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