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Volumn 10, Issue 4, 2002, Pages 261-270

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Author keywords

Atomic force microscopy; Dislocations; Gallium nitride; Lateral growth rate; Metalorganic vapour phase epitaxy; Pendeo epitaxy; Photoluminescence; Raman; Relaxation; Strain; Vertical growth rate; Wing tilting; X ray diffraction

Indexed keywords


EID: 0346110773     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (12)

References (45)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.