Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)

Solid-State Electronics

Volumn 46, Issue 8, 2002, Pages 1231-1234

  Huang, Jingyun ^a   Ye, Zhizhen ^a   Wang, Lei ^a   Yuan, Jun ^a   Zhao, Binghui ^a   Lu, Huanming ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Epitaxial growth; GaN film; Silicon nitride buffer

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICON NITRIDE; SPECTRUM ANALYSIS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL FILMS;

GALLIUM NITRIDE;

EID: 0036680670     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00021-7     Document Type: Article

References (15)