Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 733-740

  Kaiser, S ^a   Jakob, M ^a   Zweck, J ^a   Gebhardt, W ^a   Ambacher, O ^b   Dimitrov, R ^b   Schremer, A T ^c   Smart, J A ^c   Shealy, J R ^c  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; ELECTRON GAS; ELECTRONIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; MOIRE FRINGES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON WAFERS; STRAIN;

ALUMINUM GALLIUM NITRIDE; CAPACITANCE-VOLTAGE CHARACTERISTICS; FOURIER FILTERING;

HETEROJUNCTIONS;

EID: 0034155538     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591268     Document Type: Article

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