Spatial inhomogeneity of luminescence in III-nitride compounds

Medziagotyra

Volumn 17, Issue 4, 2011, Pages 343-351

  Tamulaitis, Gintautas ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

Author keywords

AlGaN; Cathodoluminescence; Confocal microscopy; III nitrides; InGaN; Microphotoluminescence; Scanning near field optical microscopy; Spatially resolved luminescence

Indexed keywords

EID: 84869233943     PISSN: 13921320     EISSN: None     Source Type: Journal    
DOI: 10.5755/j01.ms.17.4.768     Document Type: Article

References (71)

1. Shur, M. S., Gaska, R. Deep-Ultraviolet Light-Emitting Diodes. IEEE Transactions on Electron Devices 57 2010: pp. 12-25. http://dx.doi.org/10.1109/TED.2009.2033768
2. Khan, A., Balakrishnan, K., Katona, T. Nature Photonics 2 2008: pp. 77-84. http://dx.doi.org/10.1038/nphoton.2007.293
3. Khan, A., Shatalov, M., Maruska, H. P., Wang, H. M., Kuokstis, E. III-Nitride UV Devices Japanese. Journal of Applied Physics 44 2005: pp. 7191-7206. http://dx.doi.org/10.1143/JJAP.44.7191
4. Wu, J. When Group-III Nitrides Go Infrared: New Properties and Perspectives. Journal of Applied Physics 106 2009: p. 011101.
5. Lee, S. R., Wright, A. F., Crawford, M. H., Petersen, G. A., Han, J., Biefeld, R. M. The Band-gap Bowing of AlxGa1-xN Alloys. Applied Physics Letters 74 1999: pp. 3344-3346. http://dx.doi.org/10.1063/1.123339
6. Pawley, J. B. Handbook of Biological Confocal Microscopy. 1995: p. 2.
7. Corle, T. R., Kino, G. S. Confocal Scanning Optical Microscopy and Related Imaging Systems. 1996: p. 39.
8. Murphy, D. B. Fundamentals of Light Microscopy and Electronic Imaging. 2001.
9. Betzig, E., Trautman, J. K., Harris, T. D., Weiner, J. S., Kostelak, R. L. Breaking the Diffraction Barrier-Optical Microscopy on a. Nanometric Scale Science 251 1991: p. 1468.
10. Kaneta, A., Okamoto, K., Kawakami, Y., Fujita, Sh., Marutsuki, G., Narukawa, Y., Mukai, T. Spatial and Temporal Luminescence Dynamics in an InxGa1-xN Single Quantum Well Probed by Near-field Optical Microscopy. Applied Physics Letters 81 2002: p. 4353.
11. Kaneta, A., Hashimoto, T., Nishimura, K., Funato, M., Kawakami, Y. Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy. Applied Physics Express 3 2010: p. 102102.
12. Merano, M., Sonderegger, S., Crottini, A., Collin, S., Renucci, P., Pelucchi, E., Malko, A., Baier, M. H., Kapon, E., Deveaud, B., Ganiére, J.-D. Probing Carrier Dynamics in Nanostructures by Picosecond Cathodoluminescence. Nature 438 2005: pp. 479-482.
13. Liu, L., Edgar, J. H. Substrates for Gallium Nitride Epitaxy. Materials Science and Engineering R 37 2002: p. 61. http://dx.doi.org/10.1016/S0927-796X(02)00008-6
14. Porowski, S. Bulk and Homoepitaxial GaN-growth and Characterisation. Journal of Crystal Growth 189 1998: pp. 153-158.
15. Dwilinski, R., Doradzinski, R., Garczynski, J., Sierzputowski, L. P., Puchalski, A., Kanbara, Y., Yagi, K., Minakuchi, H., Hayashi, H. Excellent Crystallinity of Truly Bulk Ammonothermal GaN. Journal of Crystal Growth 310 2008: p. 3911. http://dx.doi.org/10.1016/j.jcrysgro.2008.06.036
16. Grandusky, J. R., Gibb, S. R., Mendrick, M. C., Moe, C., Wraback, M., Schowalter, L. J. High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance. Applied Physics Express 4 2011: p. 082101.
17. Usui, A., Sunakawa, H., Sakai, A., Yamaguchi, A. A. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy Japanese. Journal of Applied Physics 36 1997: pp. L899-L902.
18. Monemar, B., Larsson, H., Hemmingsson, C., Ivanov, I. G., Gogova, D. Growth of Thick GaN Layers with Hydride Vapour Phase Epitaxy. Journal of Crystal Growth 281 2005: pp. 17-31.
19. Kumagai, Y., Yamane, T., Koukitu, A. Growth of Thick AlN Layers by Hydride Vapor-phase Epitaxy. Journal of Crystal Growth 281 2005: pp. 62-67.
20. Kim, S., Oh, J., Kang, J., Kim, D., Won, J., Kim, J. W., Cho, H.-K. Two-step Grrowth of High Quality GaN Using V/III Ratio Variation in the Initial Growth Stage. Journal Crystal Growth 262 2004: pp. 7-13.
21. Kapolnek, D., Keller, S., Vetury, R., Underwood, R. D., Kozodoy, P., Baars, S. P. D., Mishra, U. K. Anisotropic Epitaxial Lateral Growth in GaN Selective Area Epitaxy. Applied Physics Letters 71 1997: pp. 1204-1206. http://dx.doi.org/10.1063/1.119626
22. Ho, I., Stringfellow, G. B. Solid Phase Immiscibility in GaInN. Applied Physics Letters 69 1996: p. 2701. http://dx.doi.org/10.1063/1.117683
23. Matsuoka, T. Phase Separation in Wurtzite In1-x-yGaxAlyN. Journal of Nitride Semiconductors Research 3 1998: p. 54.
24. Bernardini, F., Fiorentini, V. Macroscopic Polarization and Band Ofsets at Nitride Heterojunctions. Physics Review B 57 1998: p. R9427.
25. Pinos, A., Marcinkevičius, S., Liu, K., Shur, M. S., Kuokštis, E., Tamulaitis, G., Gaska, R., Yang, J., Sun, W. Screening Dynamics of Intrinsic Electric Field in AlGaN Quantum Wells. Applied Physics Letters 92 2008: p. 061907. http://dx.doi.org/10.1063/1.2857467
26. Mickevičius, J., Kuokštis, E., Liuolia, V., Tamulaitis, G., Shur, M. S., Yang, J., Gaska, R. Photoluminescence Dynamics of AlGaN Quantum Wells with Built-in Electric Fields and Localized States. Physica Status Solidi A 207 2010: p. 423.
27. Lin, Y.-S., Ma, K.-J., Hsu, C., Feng, S.-W., Cheng, Y.-C., Liao, C.-C., Yang, C. C., Chou, C.-C., Lee, C.-M., Chyi, J.-I. Dependence of Composition Fluctuation on Indium Content in InGaN/GaN Multiple Quantum Wells. Applied Physics Letters 77 2000: p. 2988. http://dx.doi.org/10.1063/1.1323542
28. Cho, H. K., Lee, J. Y., Sharma, N., Humphreys, C. J., Yang, G. M., Kim, C. S., Song, J. H., Yu, P. W. Effect of Growth Interruptions on the Light Emission and Indium Clustering of InGaN/GaN Multiple Quantum Wells. Applied Physics Letters 79 2001: p. 2594. http://dx.doi.org/10.1063/1.1410362
29. Gerthsen, D., Hahn, E., Neubauer, B., Rosenauer, A., Schön, O., Heuken, M., Rizzi, A. Composition Fluctuations in InGaN Analyzed by Transmission Electron Microscopy. Physica Status Solidi A 177 2000: p. 145.
30. Ruterana, P., Kret, S., Vivet, A., Maciejewski, G., Dluzewski, P. Composition Fluctuation in InGaN Quantum Wells Made from Molecular Beam or Metalorganic Vapor Phase Epitaxial Layers. Journal of Applied Physics 91 2002: p. 8979.
31. Smeeton, T. M., Kappers, M. J., Barnard, J. S., Vickers, M. E., Humphreys, C. J. Electron-Beam-Induced Strain within InGaN Quantum Wells: False Indium Cluster Detection in the Transmission Electron Microscope. Applied Physics Letters 83 2003: pp. 5419-5421.
32. Bellaiche, L., Mattila, T., Wang, L.-W., Wei, S. H., Zunger, A. Resonant Hole Localization and Anomalous Optical Bowing in InGaN Alloys. Applied Physics Letters 74 1999: p. 1842. http://dx.doi.org/10.1063/1.123687
33. Kent, P. R. C., Zunger, A. Carrier Localization and the Origin of Luminescence in Cubic InGaN Alloys. Applied Physics Letters 79 2001: pp. 1977-1979. http://dx.doi.org/10.1063/1.1405003
34. Chichibu, S. F., Takeyoshi, A. U., Onuma, A., Haskell, B. A., Chakraborty, A., Koyama, T., Fini, P. T., Keller, S., Denbaars, S. P., Speck, J. S., Mishra, U. K., Nakamura, S., Yamaguchi, S., Kamiyama, S., Amano, H., Akasaki, I., Han, J., Sota, T. Origin of Defect-insensitive Emission Probability in In-containing (Al,In,Ga)N Alloy Semiconductors. Nature Materials 5 2006: pp. 810-816. http://dx.doi.org/10.1038/nmat1726
35. Franssen, G., Grzanka, S., Czernecki, R., Suski, T., Marona, L., Riemann, T., Christen, J., Teisseyre, H., Valvin, P., Lefebvre, P., Perlin, P., Leszczynski, M., Grzegory, I. Efficient Radiative Recombination and Potential Profile Fluctuations in Low-dislocation InGaN/GaN Multiple Quantum Wells on Bulk GaN Substrates. Journal of Applied Physics 97 2005: p. 103507. http://dx.doi.org/10.1063/1.1897066
36. Graham, D. M., Soltani-Vala, A., Dawson, P., Godfrey, M. J., Smeeton, T. M., Bernard, J. S., Kappers, M. J., Humphreys, C. J. Optical and Microstructural Studies of InGaN/GaN Single-Quantum-Well Structures. Journal of Applied Physics 97 2005: p. 103508. http://dx.doi.org/10.1063/1.1897070
37. Gotoh, H., Akasaka, T., Tawara, T., Kobayashi, Y., Makimoto, T., Nakano, H. Detecting Spatially Localized Excitons in InGaN Quantum Well Structures with a Microphotoluminescence Technique. Solid State Community 138 2006: pp. 590-593.
38. 1-N/GaN Multiple Quantum Well Structures. Journal of Applied Physics 104 2008: p. 013524. http://dx.doi.org/10.1063/1.2938081
39. Varshni, Y. P. Band-to-band Radiative Recombination in Groups IV, VI, and III-V Semiconductors. Physica Status Solidi 19 1967: pp. 459-514. http://dx.doi.org/10.1002/pssb.19670190202
40. Vina, L., Logothetidis, S., Cardona, M. Temperature Dependence of the Dielectric Function of Germanium. Physical Review B 30 1984: p. 1979.
41. Ivchenko, E. L., Reznitsky, A. N. Hopping and Low-temperature Photoluminescence in Solid Solutions and Amorphous Semiconductors. Philosophical Magazine B 65 1992: pp. 733-737.
42. Monroe, D. Hopping in Exponential Band Tails. Physics Review Letters 54 1985: pp. 146-149. http://dx.doi.org/10.1103/PhysRevLett.54.146
43. Zimmermann, R., Runge, E. Excitons in Narrow Quantum Wells: Disorder Localization and Luminescence Kinetics. Physica Status Solidi A 164 1997: pp. 511-516.
44. Kazlauskas, K., Tamulaitis, G., Pobedinskas, P., Žukauskas, A., Springis, M., Huang, C.-F., Cheng, Y.-C., Yang, C. C. Exciton Hopping in InxGa1-xN Multiple Quantum Wells. Physics Review B 71 2005: p. 085306. http://dx.doi.org/10.1103/PhysRevB.71.085306
45. Chichibu, S., Wada, K., Nakamura, S. Spatially Resolved Cathodoluminescence Spectra of InGaN Quantum Wells. Applied Physics Letters 71 1997: p. 2346. http://dx.doi.org/10.1063/1.120025
46. Humphreys, C. J. Does In Form In-rich Clusters in InGaN Quantum Wells. Philosophical Magazine 87 2007: p. 1971. http://dx.doi.org/10.1080/14786430701342172
47. Bertram, F., Srinivasan, S., Geng, L., Ponce, F. A., Riemann, T., Christen, J., Tanaka, S., Omiya, H., Nakagawa, Y. Spatial Variation of Luminescence of InGaN Alloys Measured by Highly-Spatially-Resolved Scanning Catholuminescence. Physica Status Solidi B 228 2001: pp. 35-39. http://dx.doi.org/10.1002/1521-3951(200111)228:135::AID-PSSB353.0.CO;2-1
48. Cherns, D., Henley, S. J., Ponce, F. A. Edge and Screw Dislocations as Nonradiative Centers in InGaN/GaN Quantum Well Luminescence. Applied Physics Letters 78 2001: p. 2691. http://dx.doi.org/10.1063/1.1369610
49. Brooksby, J. C., Mei, J., Ponce, F. A. Correlation of Spectral Luminescence with Threading Dislocations in Green-light-emitting InGaN Quantum Wells. Applied Physics Letters 90 2007: p. 231901. http://dx.doi.org/10.1063/1.2746062
50. Oh, E., Park, H., Sone, C., Nam, O., Park, Y., Kim, T. Micro-photoluminescence Study of InxGa1-xN/GaN Quantum Wells. Solid State Community 113 2000: pp. 461-464.
51. Gotoh, H., Akasaka, T., Tawara, T., Kobayashi, Y., Makimoto, T., Nakano, H. Detecting Spatially Localized Excitons in InGaN Quantum Well Structures with a Micro-photoluminescence Technique. Solid State Community 138 2006: pp. 590-593.
52. Ko, T. S., Lu, T. C., Wang, T. C., Chen, J. R., Gao, R. C., Lo, M. H., Kuo, H. C., Wang, S. C., Shen, J. L. Optical Study of a-plane InGaN/GaN Multiple Quantum Wells with Different Well Widths Grown by Metal-organic Chemical Vapor Deposition. Journal of Applied Physics 104 2008: p. 093106.
53. O'Donnell, K. P., Cowan, C. T., Pereira, S., Bangura, A., Young, C., White, M. E., Tobin, M. J. Spectroscopic Imaging of InGaN Epilayers. Physica Status Solidi B 216 1999: pp. 157-161. http://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1157::AID-PSSB1573.0.CO;2-K
54. Vierheilig, C., Braun, H., Schwarz, U. T., Wegscheider, W., Baur, E., Strauß, U., Harle, V. Lateral Diffusion of Photogenerated Carriers in InGaN/GaN Heterostructures Observed by PL Measurements. Physica Status Solidi C 4 2007: pp. 2362-2365. http://dx.doi.org/10.1002/pssc.200674771
55. Okamoto, K., Kaneta, A., Kawakami, Y., Fujita, S., Choi, J., Terazima, M., Mukai, T. Confocal Microphotoluminescence of InGaN-based Light-emitting Diodes. Journal of Applied Physics 98 2005: p. 064503. http://dx.doi.org/10.1063/1.2037869
56. Hitzel, F., Hangleiter, A., Bader, S., Lugauer, H.-J., Härle, V. Correlation of Defects and Local Bandgap Variations in GaInN/GaN/AlGaN LEDs. Physica Status Solidi B 228 2001: pp. 407-410. http://dx.doi.org/10.1002/1521-3951(200111)228:2407::AID-PSSB4073.0.CO;2-Q
57. Kaneta, A., Okamoto, K., Kawakami, Y., Fujita, S., Marutsuki, G., Narukawa, Y., Mukai, T. Spatial and Temporal Luminescence Dynamics in an InxGa1-xN Single Quantum Well Probed by Near-field Optical Microscopy Luminescence. Applied Physics Letters 81 2002: pp. 4353-4355.
58. Okamoto, K., Kaneta, A., Kawakami, Y., Fujita, S., Choi, J., Terazima, M., Mukai, T. Confocal Microphotoluminescence of InGaN-based Light-emitting Diodes. Journal of Applied Physics 98 2005: p. 064503. http://dx.doi.org/10.1063/1.2037869
59. Kaneta, A., Funato, M., Kawakami, Y. Nanoscopic Recombination Processes in InGaN/GaN Quantum Wells Emitting Violet, Blue, and Green Spectra. Physics Review B 78 2008: p. 125317.
60. Narayan, J., Wang, H., Ye, J., Hon, S.-J., Fox, K., Chen, J. C., Choi, H. K., Fan, J. C. C. Effect of Thickness Variation in High-efficiency InGaN/GaN Light-emitting Diodes. Applied Physics Letters 81 2002: p. 841. http://dx.doi.org/10.1063/1.1496145
61. Kwon, S.-Y., Kim, H. J., Yoon, E., Jang, Y., Yee, K.-J., Lee, D., Park, S.-H., Park, D.-Y., Cheong, H., Rol, F., Dang, L. S. Optical and Microstructural Studies of Atomically Flat Ultrathin In-rich InGaN/GaN Multiple Quantum Wells. Journal of Applied Physics 103 2008: p. 063509. http://dx.doi.org/10.1063/1.2874494
62. Sonderegger, S., Feltin, E., Merano, M., Crottini, A., Carlin, J. F., Sachot, R., Deveaud, B., Grandjean, N., Ganiere, J. D. High Spatial Resolution Picosecond Cathodoluminescence of InGaN Quantum Wells. Applied Physics Letters 89 2006: p. 232109. http://dx.doi.org/10.1063/1.2397562
63. Dobrovolskas, D., Mickevičius, J., Kuokštis, E., Tamulaitis, G., Shur, M., Shatalov, M., Yang, J., Gaska, R. Confocal Spectroscopy of InGaN LED Structures. Journal of PhysicsD: Applied Physics 44 2011: p. 135104. http://dx.doi.org/10.1088/0022-3727/44/13/135104
64. Hangleiter, A., Hitzel, F., Netzel, C., Fuhrmann, D., Rossow, U., Ade, G., Hinze, P. Suppression of Nonradiative Recombination by V-shaped Pits in GaInN/GaN Quantum Wells Produces a Large Increase in the Light Emission Efficiency. Physics Review Letters 95 2005: p. 127402.
65. Cho, Y-H., Gainer, G. H., Lam, J. B., Song, J. J., Yang, W., Jhe, W. Dynamics of Anomalous Optical Transitions in AlxGa1-xN Alloys. Physics Review B 61 2000: pp. 7203-7206.
66. Kim, H. S., Mair, R. A., Li, J., Lin, J. Y., Jiang, H. X. Time-resolved Photoluminescence Studies of AlxGa1-xN Alloys. Applied Physics Letters 76 2000: p. 1252. http://dx.doi.org/10.1063/1.126000
67. Bell, A., Srinivasan, S., Plumlee, C., Omiya, H., Ponce, F. A., Christen, J., Tanaka, S., Fujioka, A., Nakagawa, Y. Exciton Freeze-out and Thermally Activated Relaxation at Local Potential Fluctuations in Thick AlxGa1-xN layers. Journal of Applied Physics 95 2004: p. 4670. http://dx.doi.org/10.1063/1.1689736
68. Kazlauskas, K., Žukauskas, A., Tamulaitis, G., Mickevičius, J., Shur, M. S., Fared, R. S. Q., Zhang, J. P., Gaska, R. Exciton Hopping and Nonradiative Decay in AlGaN Epilayers. Applied Physics Letters 87 2005: p. 172102. http://dx.doi.org/10.1063/1.2112169
69. 1-N Alloys. Applied Physics Letters 86 2005: p. 031916. http://dx.doi.org/10.1063/1.1856702
70. Murotani, H., Saito, T., Kato, N., Yamada, Y., Taguchi, T., Ishibashi, A., Kawaguchi, Y., Yokogawa, T. Localization-Induced Inhomogeneous Screening of Internal Electric Fields in AlGaN-based Quantum. Applied Physics Letters 91 2007: p. 231910. http://dx.doi.org/10.1063/1.2817749
71. Pinos, A., Liuolia, V., Marcinkevicius, S., Yang, J, Gaska, R., Shur, M. S. Localization Potentials in AlGaN Epitaxial Films Studied by Scanning Near-field Optical Spectroscopy. Journal of Applied Physics 109 2011: p. 113516.