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Volumn 207, Issue 2, 2010, Pages 423-427

Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN QUANTUM WELLS; CARRIER LOCALIZATION; INTERNAL QUANTUM EFFICIENCY; LOCALIZED STATE; MEMOCVD; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM-WELL STRUCTURES; PHOTOGENERATED CARRIERS; QUANTUM WELL; QUANTUM-CONFINED STARK EFFECT; RADIATIVE PROPERTIES; WELL WIDTH;

EID: 76949104460     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925227     Document Type: Article
Times cited : (9)

References (28)
  • 7
    • 76949102012 scopus 로고    scopus 로고
    • Layer Growth Using Metal Film and/or Islands
    • United States Patent Application 20060286782
    • R. Gaska, J. Zhang, and M. S. Shur, "Layer Growth Using Metal Film and/or Islands", United States Patent Application 20060286782 (2006).
    • (2006)
    • Gaska, R.1    Zhang, J.2    Shur, M.S.3
  • 8
    • 70450135270 scopus 로고    scopus 로고
    • Nitride-based light emitting heterostructure
    • U.S. Patent 7, 326, 963
    • R. Gaska, J. Zhang, and M. S. Shur, "Nitride-based light emitting heterostructure", U.S. Patent 7, 326, 963 (2008).
    • (2008)
    • Gaska, R.1    Zhang, J.2    Shur, M.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.