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Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

(6) Pinos, A a Liuolia, V a Marcinkevicius S a Yang, J b Gaska, R b Shur, M S c

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b SENSOR ELECTRONIC TECHNOLOGY INC (United States)

c RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONTENT; ALGAN; ALGAN FILMS; ALN; ATOMIC LAYER; BAND GAP ENERGY; COMPOSITIONAL FLUCTUATIONS; DUAL LOCALIZATIONS; LOCALIZATION POTENTIAL; MOLAR FRACTIONS; NEAR-FIELD OPTICAL SPECTROSCOPY; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE SPECTRUM; POTENTIAL VARIATIONS; STRESS VARIATIONS;

ALUMINUM; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM; GRAIN BOUNDARIES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY;

EPITAXIAL FILMS;

EID: 79959480315 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3594239 Document Type: Article

Times cited : (59)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.