Optical and microstructural studies of atomically flat ultrathin In-rich InGaNGaN multiple quantum wells

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Kwon, Soon Yong ^a,f   Kim, Hee Jin ^a   Yoon, Euijoon ^a   Jang, Yudong ^b   Yee, Ki Ju ^b   Lee, Donghan ^b   Park, Seoung Hwan ^c   Park, Do Young ^d   Cheong, Hyeonsik ^d   Rol, Fabian ^e   Dang, Le Si ^e  

^a Seoul National University   (South Korea)

^b Chungnam National University   (South Korea)

^c Catholic University of Daegu   (South Korea)

^d Sogang University   (South Korea)

^e UNIV GRENOBLE ALPES   (France)

^f UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRIC FIELDS; MICROSTRUCTURE; OPTICAL PROPERTIES; PHOTOEXCITATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

EXCITATION POWER; PHOTOEXCITED CARRIERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 41549110345     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2874494     Document Type: Article

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