Phase separation in wurtzite In1-x-yGaxAl yN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Matsuoka, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPOSITION; COMPUTER SIMULATION; FREE ENERGY; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION;

BAND-GAP ENERGY; INTERACTION PARAMETERS; REGULAR SOLUTION; UNSTABLE REGION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 84862397618     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001265     Document Type: Article

References (11)

1. T. Matsuoka, H. Tanaka, T. Sasaki, A. Katsui, Inst. Phys. Conf. Ser. 106, 141 (1990).
2. T. Matsuoka, J. Cryst. Growth 189/190, 19 (1998).
3. I. Ho, G.B. Stringfellow, Appl. Phys. Lett. 69, 2701-2703 (1996).
4. K. Onabe, Jpn. J. Appl. Phys. 21, L323 (1982).
5. T. Matsuoka, Appl. Phys. Lett. 71, 105 (1997).
6. J. L. Meijering, Philips Res. Rep. 5, 333 (1950).
7. G. B. Stringfellow, J. Cryst. Growth 27, 21 (1974).
8. J. C. Philips, Phys. Rev. B 2, 2147 (1968).
9. T. Matsuoka, N. Yoshimoto, T. Sasaki, A. Katsui, J. Electron. Mater. 21, 157-163 (1992).
10. K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, Robert F. Davis, H. Tsuda, W. Taki, N. Kuwano, K. Oki, MRS Internet J. Nitride Semicond. Res. 2, 6 (1997).
11. K. Onabe, NEC Res. & Develop. 72, 1 (1984).