Correlation of defects and local Bandgap variations in GaInN/GaN/AlGaN LEDs

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 2, 2001, Pages 407-410

  Hitzel, F ^a   Hangleiter, A ^a   Bader, S ^b   Lugauer, H J ^b   Harle V ^b  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035539911     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:2<407::AID-PSSB407>3.0.CO;2-Q     Document Type: Article

References (9)

1. S. NAKAMURA, M. SENOH, N. IWASA, and S. NAGAHAMA, Appl. Phys. Lett. 67, 1868 (1995).
2. S. NAKAMURA, IEEE J. Sel. Top. Quantum Electron. 3, 435 (1997).
3. S. D. LESTER, F. A. PONCE, M. G. CRAFORD, and D. A. STEIGERWALD, Appl. Phys. Lett. 66, 1249 (1995).
4. X. ZHANG, D. H. RICH, J. T. KOBAYASHI, N. P. KOBAYASHI, and P. D. DAPKUS, Appl. Phys. Lett. 73, 1432 (1998).
5. T. SOMEYA and Y. ARAKAWA, Jpn. J. Appl. Phys. 38, L1216 (1999).
6. R. STÖCKLE, C. FOKAS, V. DECKERT, and R. ZENOBI, Appl. Phys. Lett. 75, 160 (1999).
7. P. VISCONTI, K. M. JONES, M. A. RESHCHIKOV, R. CINGOLANI, and H. MORKOÇ, Appl. Phys. Lett. 77, 3532 (2000).
8. J. S. IM, H. KOLLMER, J. OFF, A. SOHMER, F. SCHOLZ, and A. HANGLEITER, Phys. Rev. B 57, R9435 (1998).
9. H. KOLLMER, JIN SEO IM, S. HEPPEL, J. OFF, F. SCHOLZ, and A. HANGLEITER, Appl. Phys. Lett. 74, 82 (1999).