Growth of thick GaN layers with hydride vapour phase epitaxy

Journal of Crystal Growth

Volumn 281, Issue 1, 2005, Pages 17-31

  Monemar, B ^a   Larsson, H ^a   Hemmingsson, C ^a   Ivanov, I G ^a   Gogova, D ^a,b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

A1. Characterization; A1. Computer simulation; A1. Defects; A3. Chloride vapour phase deposition; B1. Gallium nitride

Indexed keywords

CHARACTERIZATION; COMPUTER SIMULATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); SEMICONDUCTOR LASERS; VAPOR PHASE EPITAXY;

CHLORIDE VAPOR PHASE DEPOSITION; DISLOCATION DENSITY; GROWTH CHEMISTRY; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

GALLIUM NITRIDE;

EID: 20744457920     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.040     Document Type: Conference Paper

References (20)

1. F. Dwikusuma, S.E. Babcock, and T.F. Kuech T. Paskova B. Monemar Nitrides as seen by the Technology 2003 Research Signpost 79
2. T. Paskova, and B. Monemar B. Gil Low Dimensional Nitride Semiconductors 2002 Oxford Science Publications 79
3. A. Trassoudaine, R. Cadoret, and E. Aujol P. Ruterana M. Albrecht J. Neugebauer Nitride Semiconductors, Handbook on Materials and Devices 2003 Wiley-VCH 193
4. P. Gibart, B. Beaumont, and P. Vennegues P. Ruterana M. Albrecht J. Neugebauer Nitride Semiconductors, Handbook on Materials and Devices 2003 Wiley-VCH 45
5. E. Valcheva, T. Paskova, S. Tungasmita, P.O. Persson, J. Birch, E.B. Svedberg, L. Hultman, and B. Monemar Appl. Phys. Lett. 76 2000 1860
6. V.S. Ban J. Electrochem. Soc. 119 1972 761
7. A. Trassoudaine, R. Cadoret, and E. Gil-Lafon J. Crystal Growth 260 2004 7
8. E.M. Goldys, T. Paskova, I.G. Ivanov, B. Arnaudov, and B. Monemar Appl. Phys. Lett. 73 1998 3583
9. M. Albrecht, I.P. Nikitina, A.E. Nikolaev, Yu.V. Melnik, V.A. Dmitriev, and H.P. Strunk Phys. Stat. Sol. (A) 176 1999 453
10. R.P. Vaudo, X. Xu, C. Loria, A.D. Salant, J.S. Flynn, and G.R. Brandes Phys. Stat. Sol. (A) 194 2002 494
11. D. Gogova, A. Kasic, H. Larsson, B. Pécz, R. Yakimova, B. Magnusson, B. Monemar, F. Tuomisto, K. Saarinen, C. Miskys, M. Stutzmann, C. Bundesmann, and M. Schubert Jpn. J. Appl. Phys. 43 4A 2004 1264
12. E.V. Etzkorn, and D.R. Clarke J. Appl. Phys. 89 2000 1025
13. T. Detchprohm, K. Hiramatsu, K. Itoh, and I. Akasaki Jpn. J. Appl. Phys. 31 1992 L1454
14. T. Paskova, E.M. Goldys, and B. Monemar J. Crystal Growth 200 1999 1
15. J. Jasinski, and Z. Liliental-Weber J. Electron. Mater. 31 2002 429
16. M.K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh, and M. Stutzmann Phys. Stat. Sol. (A) 159 1997 R3
17. M.K. Kelly, R.P. Vaudo, V.M. Phanse, L. Görgens, O. Ambacher, and M. Stutzmann Jpn. J. Appl. Phys. 38 1999 L217
18. D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Toumisto, K. Saarinen, L. Dobos, B. Pécs, P. Gibart, and B. Beaumont J. Appl. Phys. 96 2004 799
19. B. Gil R.K. Willardson E. Weber Gallium Nitride II, Semiconductors and Semimetals Vol. 57 1999 Academic Press New York 209
20. O. Lagerstedt, and B. Monemar J. Appl. Phys. 45 1974 2266