Micro-photoluminescence study of InxGa1-xN/GaN quantum wells

Solid State Communications

Volumn 113, Issue 8, 2000, Pages 461-464

  Oh, E ^a   Park, H ^a   Sone, C ^a   Nam, O ^a   Park, Y ^a   Kim, T ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

MICRO-PHOTOLUMINESCENCE (PL);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033895622     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00512-8     Document Type: Article

References (21)

1. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Chocho K. Appl. Phys. Lett. 72:1998;211.
2. Chichibu S., Wada K., Nakamura S. Appl. Phys. Lett. 71:1997;2346.
3. Narukawa Y., Kawakami Y., Funato M., Fujita S., Fujita S., Nakamura S. Appl. Phys. Lett. 70:1997;981.
4. Chichibu S., Azuhata S.T., Nakamura S. Appl. Phys. Lett. 70:1997;2822.
5. Narukawa Y., Kawakami Y., Fujita S., Fujita S. Phys. Rev. B. 55:1997;R1938.
6. Wakahara A., Tokuda T., Dang X.-Z., Noda S., Sasaki A. Appl. Phys. Lett. 71:1997;906.
7. E. Oh, C.S. Sone, H. Park, O.H. Nam, Y. Park, in preparation.
8. Chichibu S.F., Abare A.C., Minsky M.S., Keller S., Fleischer S.B., Bowers J.E., Hu E., Mishra U.K., Colden L.A., DenBaars S.P., Sota T. Appl. Phys. Lett. 73:1998;2006.
9. Takeuchi T., Sota S., Katsuragawa M., Komori M., Takeuchi H., Amano H., Akasaki I., Jpn. J. Appl. Phys. 36:1997;L382.
10. Kollmer H., Im J.S., Off J., Scholz F., Hangleiter A. Appl. Phys. Lett. 74:1999;82.
11. Oh E., Sone C.S., Park H., Nam O.H., Park Y. Phys. Stat. Sol. (b). 216:1999;487.
12. A. Tsujimura, A. Ishibashi, Y. Hasegawa, S. Kamiyama, I. Kidoguchi, N. Otsuka, R. Miyanaga, G. Sugahara, M. Suzuki, M. Kume, K. Harafuji, Y. Ban, in preparation.
13. Nakamura S. IEEE J. Select. Topics Quant. Electron. 3:1997;712.
14. Cho Y.-H., Song J.J., Keller S., Minski U.S., Hu E., Mishra U.K., DenBaars S.P. Appl. Phys. Lett. 73:1998;1128.
15. Uchida K., Tang T., Goto S., Mishima T., Niwa A., Gotoh J. Appl. Phys. Lett. 74:1998;1153.
16. 1-xN epilayers.
17. Teo K.L., Colton J.S., Yu P.Y., Weber E.R., Li M.F., Liu W., Uchida K., Tokunaga H., Akutsu N., Matsumoto K. Appl. Phys. Lett. 73:1998;1697.
18. Cho Y.-H., Gainer G.H., Fischer A.J., Song J.J., Keller S., Mishra U.K., DenBaars S.P. Appl. Phys. Lett. 73:1998;1370.
19. Sugahara T., Hao M., Wang T., Nakagawa D., Naoi Y., Nishino K., Sakai S. Jpn J. Appl. Phys. 37:1998;L1195.
20. Sugahara T., Sato H., Hao M., Naoi Y., Kurai S., Tottori S., Yamashita K., Nishino K., Romano L.T., Sakai S. Jpn J. Appl. Phys. 37:1998;L398.
21. Oh E., Park H., Park Y. Appl. Phys. Lett. 72:1998;1848.