Silicon nanoclusters embedded into oxide host for non-volatile memory applications

ECS Transactions

Volumn 35, Issue 18, 2011, Pages 37-45

  Khomenkova, L ^a   Portier, X ^a   Sahu, B S ^b   Slaoui, A ^b   Bonafos, C ^c   Schamm Chardon, S ^c   Carrada, M ^c   Gourbilleau, F ^a  

^a Direction de la Recherche Fondamentale   (France)

^b Faculté de Médecine   (France)

^c CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; ANNEALING TREATMENTS; CAPACITANCE VOLTAGE CHARACTERISTIC; CHARGE STORAGE; DEPOSITION CONDITIONS; LOW OPERATING VOLTAGE; LOW THERMAL BUDGET; MEMORY CAPACITANCE; MEMORY WINDOW; MICROSTRUCTURAL PROPERTIES; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; NONVOLATILE MEMORY DEVICES; RF-MAGNETRON SPUTTERING; SILICON CLUSTERS; SILICON NANOCLUSTERS; TETRAGONAL PHASE;

AMORPHOUS SILICON; ANNEALING; DATA STORAGE EQUIPMENT; HAFNIUM OXIDES; MAGNETRON SPUTTERING; MULTILAYERS; NANOCRYSTALS; PHOTONIC DEVICES; SILICON;

SILICON OXIDES;

EID: 84868700243     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3647902     Document Type: Conference Paper

References (27)

1. V. Y. Aaron and J. P. Leburton. IEEE Potentials, 21, 35 (2002).
2. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, K. Chan. Appl.Phys.Lett., 68, 1377 (1996).
3. H. I. Hanafi, S. Tiwari, I. Khan. IEEE Trans Electron Devices, 43, 1553 (1996).
4. Y.C. King, T. J. King, C. Hu. IEEE Trans Electron Devices, 48, 696 (2001).
5. C. Y. Ng, T. P. Chen, L. Ding, S. Fung. IEEE Electron Device Lett., 27, 231 (2006).
6. E. Kapetanakis, P. Normand, D. Tsoukalas, K. Beltsios, J. Stoemenos, S. Zhang, J. van der Berg. Appl. Phys. Lett., 77, 3450 (2000).
7. L. Khomenkova, N. Korsunska, V. Yukhimchuk, B. Jumayev, T. Torchynska, A. Vivas Hernandez, A. Many, Y. Goldstein, E. Savir, J. Jedrzejewski. J. Lumin., 102-103, 705 (2003).
8. M. Baran, N. Korsunska, L. Khomenkova, T. Stara, M. Sheinkman, Y. Goldstein, J. Jedrzejewski, E. Savir. J. Appl. Phys., 98, 113515 (2005).
9. F. Gourbilleau, P. Voivenel, X. Portier, R. Rizk. Microel. Reliability, 40, 889 (2000).
10. F. Gourbilleau, X. Portier, C. Ternon, P. Voivenel, R. Rizk. Appl. Phys. Lett., 78, 3058 (2001).
11. X. Portier, C. Ternon, F. Gourbilleau, C. Dufour, R. Rizk. Physica E, 16, 439 (2003).
12. X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, M. A. Green. Nanotechnology, 20, 485703 (2009).
13. Y. He, L. Bi, J.Y. Feng, Q.L. Wu. J. Cryst. Growth, 280, 352 (2005).
14. H. Seifarth, R. Groetzschel, A. Markwitz, W. Matz, P. Nitzsche, L. Rebohle. Thin Solid Films, 330, 202 (1998).
15. N. Tomozeiu, J. J. van Hapert, E. E. van Faassen, W. Arnoldbik, A. M. Vredenberg, F. H. P. M. Habraken. J. Optoelect. Adv. Mat., 4, 513 (2002).
16. M. Perego, G. Seguini, C. Wiemer, M. Fanciulli, P.-E. Coulon, C. Bonafos. Nanotechnology, 21, 055606 (2010).
17. C. Bonafos, H. Coffin, S. Schamm, N. Cherkashin, G. Ben Assayag, P. Dimitrakis, P. Normand, M. Carrada, V. Paillard, A. Claverie. Solid-State Electronics, 49, 1734 (2005).
18. L. Khomenkova, B. S. Sahu, A. Slaoui, F. Gourbilleau. Nanoscale Research Letters, 6, 172 (2011).
19. Q. Wan, N. L. Zhang, W. L. Liu, C. L. Lin, T. H. Wang. Appl. Phys. Lett., 83, 138 (2003).
20. X. B. Lu, P. F. Lee, J.Y. Dai. Appl. Phys. Lett.,86, 203111 (2005).
21. D. W. Kim, T. Kim, S. K. Banerjee. IEEE Trans. Electron Devices 50, 1823 (2003).
22. M. Y. Chan, P. S. Lee, V. Ho, H.L. Seng. J. Appl. Phys., 102, 094307 (2007).
23. J. J. Lee, X. Wang, W. Bai, N. Lu, D. L. Kwong. IEEE Trans Electron Devices, 50, 2067 (2003).
24. F. Gourbilleau, C. Ternon, D. Maestre, O. Palais, C. Dufour. J. Appl. Phys., 106, 013501 (2009).
25. T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, M. Zacharias. J. Appl. Phys., 104 014310 (2006).
26. E. Talbot, R. Lardé, F. Gourbilleau, C. Dufour, P. Pareige. Eur. Phys. Lett. 87, 26004 (2009).
27. L. Khomenkova, C. Dufour, P.-E. Coulon, C. Bonafos, F. Gourbilleau. Nanotechnology, 21, 095704 (2010).