Theoretical and experimental investigation of Si nanocrystal memory device with HfO2 high-k tunneling dielectric

IEEE Transactions on Electron Devices

Volumn 50, Issue 10, 2003, Pages 2067-2072

  Lee, Jong Jin ^a   Wang, Xuguang ^a   Bai, Weiping ^a   Lu, Nan ^a   Kwong, Dim Lee ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Data endurance; Data retention; HfO2; High k dielectric; Nanocrystal memory; Programming efficiency

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SILICA;

DATA ENDURANCE; DATA RETENTION; ELECTRICAL OXIDE THICKNESS; ELECTRON BARRIER HEIGHT; HAFNIUM OXIDE; HIGH-K TUNNELING DIELECTRIC; NANOCRYSTAL MEMORY DEVICE;

DATA STORAGE EQUIPMENT;

EID: 0142009683     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.816107     Document Type: Article

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