Investigation of aging process of Si-Si Ox structures with silicon quantum dots

Journal of Applied Physics

Volumn 98, Issue 11, 2005, Pages

  Baran, M ^a   Khomenkova, L ^a   Korsunska, N ^a   Stara, T ^a   Sheinkman, M ^a   Goldstein, Y ^b   Jedrzejewski, J ^b   Savir, E ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PARAMAGNETIC RESONANCE; INFRARED ABSORPTION; SPUTTERED STRUCTURES;

ABSORPTION; ELECTRIC EXCITATION; OXIDATION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SILICON; SPUTTERING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 29144501246     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2134887     Document Type: Article

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