Hf-based high-k materials for Si nanocrystal floating gate memories

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Khomenkova, Larysa ^a   Sahu, Bhabani S ^a   Slaoui, Abdelilah ^a   Gourbilleau, Fabrice ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE TRAPPING; HAFNIUM OXIDES; NONVOLATILE STORAGE; SILICA; SPUTTERING; HAFNIUM; NANOCRYSTALS; SILICON COMPOUNDS;

ANNEALING TREATMENTS; CAPACITANCE VOLTAGE MEASUREMENTS; CHARGE TRAPPING CHARACTERISTICS; DEPOSITION CONDITIONS; LOW OPERATING VOLTAGE; NONVOLATILE MEMORY DEVICES; RADIO FREQUENCY SPUTTERING; TUNNEL OXIDE LAYERS; ACTIVE LAYER; CHARGE STORAGE; HIGH-K MATERIALS; MEMORY STRUCTURE; MEMORY WINDOW; SI NANOCRYSTAL; STACK STRUCTURE;

SILICON;

EID: 84255172848     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-172     Document Type: Article

References (25)

1. Aaron VY, Leburton JP: Flash memory: towards single-electronics. IEEE Potentials 2002, 21:35.
2. Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbe EF, Chan K: A silicon nanocrystals based memory. title type=journal Appl Phys Lett 1996, 68:1377
3. Hanafi HI, Tiwari S, Khan I: Fast and long retention-time nano-crystal memory. IEEE Trans Electron Devices 1996, 43:1553.
4. King YC, King TJ, Hu C: Charge-trap memory device fabricated by oxidation of Si1-x Gex. IEEE Trans Electron Devices 2001, 48:696.
5. Ng CY, Chen TP, Ding L, Fung S: Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam. IEEE Electron Device Lett 2006, 27:231.
6. Kapetanakis E, Normand P, Tsoukalas D, Beltsios K, Stoemenos J, Zhang S, van der Berg J: Charge storage and interface states effects in Si- nanocrystal memory obtained using low-energy Si+ implantation and annealing. Appl Phys Lett 2000, 77:3450.
7. Khomenkova L, Korsunska N, Yukhimchuk V, Jumayev B, Torchynska T, Vivas Hernandez A, Many A, Goldstein Y, Savir E, Jedrzejewski J: Nature of visible luminescence and its excitation in Si-SiOx systems. Journal of Luminescence. J Lumin 2003, 102-103:705.
8. Baran M, Korsunska N, Khomenkova L, Stara T, Sheinkman M, Goldstein Y, Jedrzejewski J, Savir E: Investigation of Aging Process of Si-SiO(x) Structures with Silicon Quantum Dots. J Appl Phys 2005, 98:113515.
9. Gourbilleau F, Voivenel P, Portier X, Rizk R: A novel method for the deposition of Si-SiO2 superlattices. Microel Reliability 2000, 40:889.
10. Gourbilleau F, Portier X, Ternon C, Voivenel P, Rizk R: Si rich/SiO2 nanostructured multilayers by reactive magnetron sputtering. Appl Phys Lett 2001, 78:3058.
11. Portier X, Ternon C, Gourbilleau F, Dufour C, Rizk R: Anneal temperature dependence of Si-SiO2 superlattices photoluminescence. Physica E 2003, 16:439.
12. Hao XJ, Podhorodecki AP, Shen YS, Zatryb G, Misiewicz J, Green MA: Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films. Nanotechnology 2009, 20:485703.
13. He Y, Bi L, Feng JY, Wu QL: Properties of Si-rich SiO2 films by RF magnetron sputtering. J Cryst Growth 2005, 280:352.
14. Seifarth H, Groetzschel R, Markwitz A, Matz W, Nitzsche P, Rebohle L: Preparation of SiO2 films with embedded Si nanocrystals by reactive r.f. magnetron sputtering. Thin Solid Films 1998, 330:202.
15. Tomozeiu N, van Hapert JJ, van Faassen EE, Arnoldbik W, Vredenberg AM,Habraken FHPM: Structural properties of a-SiOx layers deposited by reactive magnetron sputtering technique. J Optoelect Adv Mat 2002, 4:513.
16. Wan Q, Zhang NL, Liu WL, Lin CL, Wang TH: Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics. Appl Phys Lett 2003, 83:138.
17. Lu XB, Lee PF, Dai JY: Synthesis and memory effect study of Ge nanocrystals embedded in LaAlO3 high-k dielectrics. Appl Phys Lett 2005, 86:203111.
18. Kim DW, Kim T, Banerjee SK: Memory characterization of SiGe quantum dot flash memories with HfO2 and SiO2 tunneling dielectrics. IEEE Trans Electron Devices 2003, 50:1823.
19. Chan MY, Lee PS, Ho V, Seng HL: Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications. J Appl Phys 2007,102:094307.
20. Lee JJ, Wang X, Bai W, Lu N, Kwong DL: Theoretical and experimental investigation of Si nanocrystal memory device with HfO2 high-k tunneling dielectric. IEEE Trans Electron Devices 2003, 50:2067.
21. Khomenkova L, Dufour C, Coulon PE, Bonafos C, Gourbilleau F: High-k Hf- based layers grown by RF magnetron sputtering. Nanotechnology 2010, 21:095704.
22. Foster AS, Lopez Gejo F, Shluger AL, Nieminen RM: Vacancy and interstitial defects in hafnia. Phys Rev B 2002, 65:174117.
23. Perego M, Seguini G, Wiemer C, Fanciulli M, Coulon PE, Bonafos C: Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures. Nanotechnology 2010, 21:055606.
24. Chiang KH, Lu SW, Peng YH, Kuang CH, Tsai CS: Characterization and modeling of fast traps in thermal agglomerating germanium nanocrystal metal-oxide-semiconductor capacitor. J Appl Phys 2008, 104:014506.
25. Khomenkova L, Portier X, Cardin J, Gourbilleau F: Thermal stability of high- k Si-rich HfO2 layers grown by RF magnetron sputtering. Nanotechnology 2010,21:285707.