Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics

Applied Physics Letters

Volumn 83, Issue 1, 2003, Pages 138-140

  Wan, Q ^a,b   Zhang, N L ^b   Liu, W L ^b   Lin, C L ^b   Wang, T H ^a  

^a INSTITUTE OF PHYSICS   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON BEAMS; EVAPORATION; GERMANIUM; HYSTERESIS; LIGHTING; MIS DEVICES; PERMITTIVITY; PHOTOCONDUCTIVITY; ZIRCONIA;

GATE DIELECTRICS;

NANOSTRUCTURED MATERIALS;

EID: 0042341509     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1589196     Document Type: Article

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