Charge-trap memory device fabricated by oxidation of Si 1-x Ge x

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 696-700

  King, Ya Chin ^a,b   King, Tsu Jae ^a,c   Hu, Chenming ^a,c  

^a IEEE   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Charge trap memory; Ge nano crystal

Indexed keywords

CHARGE-TRAP MEMORY DEVICES;

ELECTRON TRAPS; FABRICATION; HOLE TRAPS; NONVOLATILE STORAGE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; THICKNESS CONTROL;

MOSFET DEVICES;

EID: 0035307245     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915694     Document Type: Article

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