Strain distribution in Si capping layers on SiGe islands: Influence of cap thickness and footprint in reciprocal space

Nanotechnology

Volumn 23, Issue 46, 2012, Pages

  Hrauda, N ^a   Zhang, J J ^a,b   Suess M J ^c   Wintersberger, E ^a,d   Hol, V ^e   Stangl, J ^a   Deiter, C ^d   Seeck, O H ^d   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b IFW DRESDEN   (Germany)

^c ETH ZURICH   (Switzerland)

^d DESY   (Germany)

^e CHARLES UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; CAP THICKNESS; CAPPING LAYER; CRUCIAL PARAMETERS; FINITE ELEMENT METHOD MODELS; GE CONCENTRATIONS; GE DISTRIBUTION; HIGH RESOLUTION X RAY DIFFRACTION; RECIPROCAL SPACE; SI CAPPING LAYER; SI LAYER; SIGE ISLANDS; STRAIN DISTRIBUTIONS; STRAIN INTERACTIONS; STRAIN PROPERTIES;

FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; GERMANIUM; SELF ASSEMBLY; SILICON ALLOYS; TENSILE STRAIN; X RAY DIFFRACTION;

SILICON;

EID: 84867943779     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/46/465705     Document Type: Article

References (30)

1. Ieong M, Doris B, Kedzierski J, Rim K and Yang M 2004 Silicon device scaling to the sub-10-nm regime Science 306 205760 (Pubitemid 40007650)
2. Thompson S E et al 2004 A 90-nm logic technology featuring strained-silicon IEEE Trans. Electron Devices 51 17907
3. Dhar S, Kosina H, Palankovski V, Ungersboeck S E and Selberherr S 2005 Electron mobility model for strained Si devices IEEE Trans. Electron Devices 52 52733 (Pubitemid 40535878)
4. Donaton R A et al 2006 Design and fabrication of MOSFETs with a reverse embedded SiGe (Rev. e-SiGe) structure 2006 Int. Electron Devices Mtg pp 1914
5. Ang K W, Tung C H, Balasubramanian N, Samudra G S and Yeo Y C 2007 Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure IEEE Electron Device Lett. 28 60912 (Pubitemid 47040466)
6. Ang K W, Lin J, Tung C H, Balasubramanian N, Samudra G S and Yeo Y C 2008 Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance IEEE Trans. Electron Devices 55 8507 (Pubitemid 351404544)
7. Packan P et al 2009 High performance 32 nm logic technology featuring 2nd generation high-k +metal gate transistors IEDM 2009: IEEE Int. Electron Devices Mtg pp 614
8. Schmidt O G and Eberl K 2001 Self-assembled Ge/Si Dots for faster field-effect transistors IEEE Trans. Electron Devices 48 1175 (Pubitemid 32576952)
9. Frégonèse S, Zhuang Y and Burghartz J N 2008 Modeling of strained CMOS on disposable SiGe dots: shape impacts on electrical/thermal characteristics Solid-State Electron. 52 91925
10. Floro J A, Chason E, Twesten R D, Hwang R Q and Freund L B 1997 SiGe coherent islanding and stress relaxation in the high mobility regime Phys. Rev. Lett. 79 39469 (Pubitemid 127645126)
11. Zhong Z, Schwinger W, Schäffler F, Bauer G, Vastola G, Montalenti F and Miglio L 2007 Delayed plastic relaxation on patterned Si substrates: coherent SiGe pyramids with dominant {111} facets Phys. Rev. Lett. 98 176102 (Pubitemid 46644549)
12. Schülli T U et al 2009 Enhanced relaxation and intermixing in Ge Islands grown on pit-patterned Si(001) substrates Phys. Rev. Lett. 102 025502
13. Sun Y, Thompson S E and Nishida T 2007 Physics of strain effects in semiconductors and metaloxidesemiconductor field-effect transistors J. Appl. Phys. 101 104503 (Pubitemid 46876582)
14. Jovanović V et al 2010 n-channel MOSFETs fabricated on sige dots for strain-enhanced mobility IEEE Electron Device Lett. 31 10835
15. Hrauda N et al 2011 X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor Nano Lett. 11 287580
16. Hesse A, Stangl J, Hol V, Roch T, Bauer G, Schmidt O G, Denker U and Struth B 2002 Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001) Phys. Rev. B 66 85321-1-8
17. Zhang J J, Stoffel M, Rastelli A, Schmidt O G, Jovanović V, Nanver L K and Bauer G 2007 SiGe growth on patterned Si(001) substrates: surface evolution and evidence of modified island coarsening Appl. Phys. Lett. 91 173115 (Pubitemid 350015283)
18. Stangl J, Hesse A, Hol V, Zhong Z, Bauer G, Denker U and Schmidt O G 2003 Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction Appl. Phys. Lett. 82 22513
19. Schmidt O G, Denker U, Eberl K, Kienzle O and Ernst F 2000 Effect of overgrowth temperature on the photoluminescence of Ge/Si islands Appl. Phys. Lett. 77 250911
20. Stoffel M, Rastelli A and Schmidt O G 2007 Surface evolution and three-dimensional shape changes of SiGe/Si(001) islands during capping at various temperatures Surf. Sci. 601 30529 (Pubitemid 47049722)
21. Zhang J J et al 2010 Collective shape oscillations of sige Islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing Phys. Rev. Lett. 105 166102
22. Seeck O H et al 2012 The high-resolution diffraction beamline P08 at PETRA III J. Synchrotron Radiat. 19 308
23. Pietsch U, Hol V and Baumbach T 2004 High-Resolution X-Ray Scattering from Thin Films and Multilayers 2nd edn (Berlin: Springer)
24. n superlattices by x-ray reciprocal space mapping J. Appl. Phys. 76 3489501
25. Bonera E, Pezzoli F, Picco A, Vastola G, Stoffel M, Grilli E, Guzzi M, Rastelli A, Schmidt O G and Miglio L 2009 Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations Phys. Rev. B 79 075321
26. www.comsol.com - ref-separator -
27. Rastelli A, Stoffel M, Malachias A, Merdzhanova T, Katsaros G, Kern K, Metzger T H and Schmidt O G 2008 Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography Nano Lett. 8 14049
28. Zhang J J, Rastelli A, Schmidt O G and Bauer G 2010 Compositional evolution of SiGe islands on patterned Si(001) substrates Appl. Phys. Lett. 97 203103
29. Kar G S, Kiravittaya S, Stoffel M and Schmidt O G 2004 Material distribution across the interface of random and ordered island arrays Phys. Rev. Lett. 93 246103 (Pubitemid 40086694)
30. Zhang J J, Hrauda N, Groiss H, Rastelli A, Stangl J, Schäffler F, Schmidt O G and Bauer G 2010 Strain engineering in Si via closely stacked, site-controlled SiGe islands Appl. Phys. Lett. 96 193101