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Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

Strain engineering in Si via closely stacked, site-controlled SiGe islands

(8) Zhang, J J a Hrauda, N a Groiss, H a Rastelli, A b Stangl, J a Schaffler F a Schmidt, O G b Bauer, G a

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

b IFW DRESDEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GE FRACTION; GROWTH PARAMETERS; LARGE SIZES; ORDERED ARRAY; QUANTUM DOT MOLECULES; SIGE ISLANDS; SIGE/SI; SINGLE LAYER; STRAIN DISTRIBUTIONS; STRAIN ENGINEERING; STRUCTURAL CHARACTERIZATION; UPPER LAYER;

FINITE ELEMENT METHOD; GERMANIUM; SILICON;

TENSILE STRAIN;

EID: 77952979034 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3425776 Document Type: Article

Times cited : (25)

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