Low-field current transport mechanisms in rf magnetron sputter deposited boron carbide (B5C)/p-type crystalline silicon junctions in the dark

International Journal of Electronics

Volumn 88, Issue 8, 2001, Pages 873-901

  Abdul Gader, M M ^a   Al Binni, U A ^a   Ahmad, Ahmad A ^b   Al Basha, M A ^c   Ianno, N J ^d  

^a UNIVERSITY OF JORDAN   (Jordan)

^b JORDAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Jordan)

^c SAUDI ARAMCO   (Saudi Arabia)

^d UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000697696     PISSN: 00207217     EISSN: None     Source Type: Journal    
DOI: 10.1080/00207210110058120     Document Type: Article

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