Boron carbide/n-silicon carbide heterojunction diodes

Applied Physics Letters

Volumn 79, Issue 26, 2001, Pages 4357-4359

  Adenwalla, S ^a   Welsch, P ^a   Harken, A ^a   Brand, J I ^a   Sezer, A ^a   Robertson, B W ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

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[No Author keywords available]

Indexed keywords

EID: 0035945118     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1426257     Document Type: Article

References (8)

1. H. E. Robson, Ph.D. thesis, University of Kansas, Lawrence, Kansas (1959);
2. H. Werheit, NATO ASI Ser., Ser. 3 68, 65 (1999).
3. S. Lee, J. Mazurowski, G. Ramseyer, and P. A. Dowben, J. Appl. Phys. 72, 4925 (1992).
4. S. Lee and P. A. Dowben, Appl. Phys. A: Solids Surf. 58, 223 (1994).
5. B. W. Robertson and P. A. Dowben, in Proceedings of the 2nd European High Temperature Electronics Conference (HITEN97) (AEA Technology, Didcot, United Kingdom, 1998), p. 219.
6. S.-d. Hwang, P. A. Dowben, A. Cheeseman, J. T. Spencer, and D. N. McIlroy, Mater. Res. Soc. Symp. Proc. 452, 1031 (1997).
7. 2) consists of four boron icosahedra in a tetragonal arrangement, like that in tetragonal boron, but with the two carbon atoms and the two remaining boron atoms occupying intericosahedral sites.
8. M. Bai, C. Davenport, and B. W. Robertson (unpublished data).