Plasma-based processes and thin film equipment for nano-scale device fabrication

Journal of Materials Science

Volumn 46, Issue 1, 2011, Pages 1-37

  Peng, Xilin ^a   Matthews, Allan ^b   Xue, Song ^c  

^a Sir Robert Hadfield Building ^*  (United States)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DIMENSION; CORROSION BEHAVIOR; DEPOSITION METHODS; DESIGN CRITERION; EDGE-DAMAGE; END POINT DETECTION; ETCHING PROCESS; FILM LAYERS; HARDWARE CONFIGURATIONS; INFORMATION STORAGE; ION BEAM DEPOSITION; ION-BEAM ETCHING; LAYER MIXING; MATERIAL THICKNESS; NANOSCALE DEVICE; PACKAGE DENSITY; PHYSICAL PRINCIPLES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PE CVD); PROPERTY CONTROL; STORAGE CAPACITY; SUBMICROMETERS; THIN FILM LAYERS; THIN-FILM DEPOSITIONS; UNIFORM FILMS;

CHEMICAL MODIFICATION; DEPOSITION; EQUIPMENT; FILM GROWTH; FILM THICKNESS; ION BEAMS; IONS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; THICKNESS MEASUREMENT; THIN FILMS; VAPOR DEPOSITION;

REACTIVE ION ETCHING;

EID: 78650749690     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-010-4974-6     Document Type: Review

References (60)

1. X Peng A Morrone K Nikolaev M Kief M Ostrowski 2009 J Magn Magn Mater 321 2902 1:CAS:528:DC%2BD1MXmvVynurw%3D 10.1016/j.jmmm.2009.04.047
2. Whelan FJ, Reidy KE (2001) USP 6,330, 801B1
3. YS Choi Y Nagamine K Tsunekawa H Maehara DD Djayaprawira S Yuasa K Ando 2007 Appl Phys Lett 90 012505 10.1063/1.2426902 (Pubitemid 46068338)
4. Chen FF (1984) Introduction to plasma physics and controlled fusion. Plenum Press, New York
5. MA Razzak K Kondo Y Uesugi N Ohno S Takamura 2004 J Appl Phys 95 2 427 1:CAS:528:DC%2BD2cXntl2j 10.1063/1.1635650
6. RL Kinder AR Ellingboe MJ Kushner 2003 Plasma Source Sci Technol 12 561 1:CAS:528:DC%2BD2cXktVKiug%3D%3D 10.1088/0963-0252/12/4/308
7. Molvik AW, Ellingboe AR (1998) USP # 5,824,602
8. C Beneking 1990 Appl Phys 68 4461 1:CAS:528:DyaK3cXmsVaqsL8%3D 10.1063/1.346196
9. Colgan MJ, Meyappan M (1995) In: Popov OA (ed) High density plasma sources: design, physics and performance. Noyes Publication, New Jersey, p 149
10. Dine S, Jolly J, Guillon J. http://www.icpig.uni-greifswald.de/ proceedings/data/Dine-1
11. SJ You HC Kim CW Chung HY Chang JK Lee 2003 J Appl Phys 94 7422 1:CAS:528:DC%2BD3sXps1Wmu78%3D 10.1063/1.1621085
12. T Kikuchi S Kogoshi 2003 Jpn J Appl Phys 42 4290 1:CAS:528: DC%2BD3sXlvVOksLo%3D 10.1143/JJAP.42.4290
13. S Samukawa Y Nakagawa T Tsukada H Ueyama K Shinohara 1995 Appl Phys Lett 67 1414 1:CAS:528:DyaK2MXnvVGmur0%3D 10.1063/1.114511
14. S Samukawa VM Donnelly MV Malyshev 2000 Jpn J Appl Phys 39 1583 1:CAS:528:DC%2BD3cXivVKmsbs%3D 10.1143/JJAP.39.1583
15. J Asmussen 1989 J Vac Sci Technol A7 883
16. Lieberman MA, Lichtenberg AJ (2005) Principles of plasma discharges and materials processing, 2nd edn. Wiley, New Jersey, p 497
17. Stevens JE (1995) In: Popov OA (ed) High density plasma sources: design, physics and performance. Noyes Publication, New Jersey, p 312
18. T Sakoda YO Yirenkyi Y Sungi M Otsubo C Honda 2001 Jpn J Appl Phys 40 6607 1:CAS:528:DC%2BD3MXos1Oiu70%3D 10.1143/JJAP.40.6607
19. H Tsuboi S Oata 2007 Jpn J Appl Phys 46 7475 1:CAS:528:DC%2BD2sXhtl2jtL3L 10.1143/JJAP.46.7475 (Pubitemid 350074935)
20. Chen FF (1995) In: Popov OA (ed) High density plasma sources: design, physics and performance. Noyes Publication, New Jersey, p 1
21. Chen W (2007) Private communication
22. Johnson WL (1995) In: Popov OA (ed) High density plasma sources: design, physics and performance. Noyes Publication, New Jersey, p 100
23. Y Ohtsu Y Okuno H Fujita 1993 Jpn J Appl Phys 32 2873 1:CAS:528:DyaK3sXlt12mtr0%3D 10.1143/JJAP.32.2873
24. SA Chang MB Skolnik C Altman 1986 J Vac Sci Technol A4 413
25. Wasa K, Hayakawa S (eds) (1992) Handbook of sputter deposition technology: principles, technology and applications. Noyes Publications, New Jersey, p 90
26. B Window F Sharples N Savvides 1985 J Vac Sci Technol A3 2368
27. B Window N Savvides 1986 J Vac Sci Technol A4 196
28. B Window N Savvides 1986 J Vac Sci Technol A4 453
29. X Peng Z Wang D Dimitrov T Boonstra S Xue 2007 J Vac Sci Technol A 25 1078 1:CAS:528:DC%2BD2sXotVGit7s%3D 10.1116/1.2742389 (Pubitemid 47158188)
30. Powell RA, Rossnagel S (eds) (1999) PVD for microelectronics: sputtering deposition applied to semiconductor manufacturing. Academic Press, New York, p 87
31. S Wickeramanayaka Y Nakagawa 1998 Jpn J Appl Phys 37 6193 10.1143/JJAP.37.6193
32. Landau RF (1986) US patent# 4,622,122
33. http://www.soleras.com/shunt/shunt.htm
34. Fujikata J, Ishi T, Mori S (2002) US Patent application # 2002/0086182 A1
35. Shimazawa K, Tsuchiya Y (2002) US Patent application # 2002/0078550 A1
36. CP Wang KB Do MR Beasley TH Geballe RH Hammond 1997 Appl Phys Lett 71 2955 1:CAS:528:DyaK2sXnsFKitLw%3D 10.1063/1.120227
37. WH Butler X-G Zhang TC Schulthess JM MacLaren 2001 Phys Rev B 63 054416 10.1103/PhysRevB.63.054416
38. Williams JD, Johnson ML, Williams DD (2004) 40th Joint Propulsion Conference AIAA-2004-3788 Fort Lauderdale, Florida, July 11-14, paper# AIAA-2004-3788
39. H Tsuge S Esho 1981 J Appl Phys 52 4391 1:CAS:528:DyaL3MXlsValtLc%3D 10.1063/1.329365 (Pubitemid 12429912)
40. X Peng S Wakeham A Morrone S Axdal M Feldbaum, et al. 2009 Vacuum 83 1007 1:CAS:528:DC%2BD1MXht1Ors7Y%3D 10.1016/j.vacuum.2008.12.003
41. Shul RJ, Zhang L, Willison CG, Han J, Pearton SJ, Hong J, Abernathy CR, Lester LF (1999) MRS Int J Nitride Semicond Res 4S1, G8.1
42. Anderson L. http://www.sgtsiliconglen.com/accurate-10.htm
43. K Tokunaga FC Redeker DA Danner DW Hess 1981 J Electrochem Soc 128 851 1:CAS:528:DyaL3MXhvFKjtL8%3D 10.1149/1.2127518
44. SC McNevin 1990 J Vac Sci Technol B8 1212 1222
45. YS Kim RH Rampersad GR Tynan 1998 Jpn J Appl Phys 37 L502 1:CAS:528:DyaK1cXjsVGnsLw%3D 10.1143/JJAP.37.L502
46. http://chemed.chem.purdue.edu
47. Roth JR (ed) (1995) Industrial plasma engineering-vol 1: principles. IOP press, Bristol, Philadelphia, p 285 (reprint Fig. 9.2)
48. JH Keller, et al. 1993 J Vac Sci Technol A11 2487
49. X Yang M Moravej SE Babayan GR Nowling RF Hicks 2005 Plasma Sources Sci Technol 14 412 1:CAS:528:DC%2BD2MXhtVOlt7fP 10.1088/0963-0252/14/3/002 (Pubitemid 41165121)
50. K Remashan SJ Chua A Ramam S Prakash W Liu 2000 Semicond Sci Technol 15 4 386 1:CAS:528:DC%2BD3cXisl2isrk%3D 10.1088/0268-1242/15/4/313 (Pubitemid 30584772)
51. N Heiman V Minkiewicz B Chapman 1980 J Vac Sci Technol 17 731 734 1:CAS:528:DyaL3cXksF2hs7o%3D 10.1116/1.570550 (Pubitemid 11425933)
52. K Tokunaga DW Hess 1980 J Electrochem Soc 127 928 1:CAS:528: DyaL3cXhvV2qsro%3D 10.1149/1.2129789
53. N Okamoto 2009 J Vac Sci Technol A 27 295 1:CAS:528:DC%2BD1MXisFKls70%3D 10.1116/1.3077297
54. N Okamotoa 2009 J Vac Sci Technol A27 456 460
55. JC Arnold HH Sawin 1991 J Appl Phys 70 5314 1:CAS:528: DyaK38XhsVWisw%3D%3D 10.1063/1.350241
56. S Samukawa 2006 Jpn J Appl Phys 45 2395 1:CAS:528:DC%2BD28XktVOjtLY%3D 10.1143/JJAP.45.2395
57. M Schaepkens GS Oehrlein 1998 Appl Phys Lett 71 1293 10.1063/1.121068 (Pubitemid 128671145)
58. X Peng Z Wang Y Lu B Lafferty T McLaughlin M Ostrowski 2010 Vacuum 84 9 1 10.1016/j.vacuum.2010.01.029
59. Y Teraoka H Aoki I Nishiyama E Ikawa T Kikkawa 1995 J Vac Sci Technol A13 2935
60. M Saito I Touno K Omiya T Homma T Nagatomo 2002 J Electrochem Soc 149 8 G451 1:CAS:528:DC%2BD38Xls1Slt70%3D 10.1149/1.1485777 (Pubitemid 34962471)