A consistent physical framework for N and P BTI in HKMG MOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2012, Pages

  Joshi, Kaustubh ^a   Mukhopadhyay, Subhadeep ^a   Goel, Nilesh ^a   Mahapatra, Souvik ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

AC stress; DC stress; NBTI; NBTI Modeling; PBTI; PBTI Modeling; RD Model; Trap Generation; Trapping

Indexed keywords

AC STRESS; DC STRESS; NBTI; PBTI; R-D MODEL; TRAP GENERATION; TRAPPING;

RELIABILITY;

EID: 84866611689     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2012.6241840     Document Type: Conference Paper

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