Stress-induced leakage current and defect generation in nFETs with HfO 2/TiN gate stacks during positive-bias temperature stress

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 486-492

  Cartier, Eduard ^a   Kerber, Andreas ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Defects; HfO2; High k dielectrics; Metal gate; Oxygen vacancies; PBTI; SILC; TDDB; TiN

Indexed keywords

HFO2; HIGH-K DIELECTRICS; METAL GATE; PBTI; SILC; TDDB;

ACTIVATION ENERGY; CHARGE TRAPPING; DEFECTS; DEGRADATION; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM COMPOUNDS; HYSTERESIS; LEAKAGE CURRENTS; LOGIC GATES; OXYGEN; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TITANIUM NITRIDE; VACANCIES;

OXYGEN VACANCIES;

EID: 67650332617     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173301     Document Type: Conference Paper

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