A common framework of NBTI generation and recovery in plasma-nitrided SiON p-MOSFETs

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 978-980

  Deora, Shwetad ^a   Maheta, V D ^a   Islam, A E ^b   Alam, M A ^b   Mahapatra, Souvik ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Generation; Hole trapping; Interface trap generation; Negative bias temperature instability (NBTI); P MOSFET; Recovery

Indexed keywords

GENERATION; HOLE TRAPPING; INTERFACE TRAP GENERATION; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); P-MOSFET;

DEGRADATION; DRAIN CURRENT; HOLE TRAPS; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; PLASMA APPLICATIONS; PLASMA STABILITY; PLASMAS; RECOVERY; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THERMODYNAMIC STABILITY;

PLASMA DIAGNOSTICS;

EID: 69949115953     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2026436     Document Type: Article

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