SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 5, 2012, Pages

Cl atom recombination on silicon oxy-chloride layers deposited on chamber walls in chlorine-oxygen plasmas

(3) Khare, Rohit a,b Srivastava, Ashutosh a Donnelly, Vincent M a

a UNIVERSITY OF HOUSTON (United States)

b LAM RESEARCH CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROMETERS; BIAS POWER; CHAMBER WALLS; CHLORINE ATOM; CL ATOMS; DC BIAS; DECAY CURVES; DETECTION LIMITS; DETECTION TIME; FEED GAS; IN-SITU; LANGMUIR-HINSHELWOOD; LINE-OF-SIGHT; OXYGEN CONCENTRATIONS; OXYGEN CONTENT; OXYGEN FRACTIONS; OXYGEN SITE; PLASMA CHAMBERS; PLASMA REACTORS; PRESSURE RISE; PURE OXYGEN PLASMA; QUADRUPLE MASS SPECTROMETER; REACTOR WALLS; RECOMBINATION COEFFICIENT; RF BIAS; SI WAFER; SUBSTRATE BIAS; SURFACE LAYERS; TIME-RESOLVED; WALL SURFACES;

ATOMS; CHLORINE; CHLORINE COMPOUNDS; DESORPTION; ELECTRIC DISCHARGES; ETCHING; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETERS; OXYGEN; PLASMA APPLICATIONS; QUARTZ; SILICON; STOICHIOMETRY; SURFACE ANALYSIS;

SILICON WAFERS;

EID: 84865510274 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.4742322 Document Type: Article

Times cited : (11)

References (46)

1
- 84889416744
- 2nd ed. (Wiley, New York).
- M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, 2nd ed. (Wiley, New York, 2005).
- (2005) Principles of Plasma Discharges and Materials Processing
- Lieberman, M.A.¹ Lichtenberg, A.J.²

2
- 65949114631
- 10.1116/1.579847
- H. Sugai, K. Nakamura, Y. Hikosaka, and M. Nakamura, J. Vac. Sci. Technol. A 13, 887 (1995). 10.1116/1.579847
- (1995) J. Vac. Sci. Technol. A , vol.13 , pp. 887
- Sugai, H.¹ Nakamura, K.² Hikosaka, Y.³ Nakamura, M.⁴

3
- 0036671703
- 10.1088/0963-0252/11/3A/328
- D. Humbird and D. B. Graves, Plasma Sources Sci. Technol. 11, A191 (2002). 10.1088/0963-0252/11/3A/328
- (2002) Plasma Sources Sci. Technol. , vol.11 , pp. 191
- Humbird, D.¹ Graves, D.B.²

4
- 0032331388
- The recombination of chlorine atoms at surfaces
- DOI 10.1116/1.580982
- G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 16, 270 (1998). 10.1116/1.580982 (Pubitemid 128020234)
- (1998) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.16 , Issue.1 , pp. 270-277
- Kota, G.P.¹ Coburn, J.W.² Graves, D.B.³

5
- 0036162520
- 2 concentrations in an inductively coupled plasma reactor
- DOI 10.1116/1.1421602
- S. J. Ullal, A. R. Godfrey, E. Edelberg, L. Braly, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 20, 43 (2002). 10.1116/1.1421602 (Pubitemid 34138326)
- (2002) Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films , vol.20 , Issue.1 , pp. 43-52
- Ullal, S.J.¹ Godfrey, A.R.² Edelberg, E.³ Braly, L.⁴ Vahedi, V.⁵ Aydil, E.S.⁶

6
- 38349164719
- 10.1063/1.2828154
- J. Guha, V. M. Donnelly, and Y.-K. Pu, J. Appl. Phys. 103, 013306 (2008). 10.1063/1.2828154
- (2008) J. Appl. Phys. , vol.103 , pp. 013306
- Guha, J.¹ Donnelly, V.M.² Pu, Y.-K.³

7
- 63749107395
- 10.1088/0022-3727/42/5/055206
- L. Stafford, R. Khare, J. Guha, V. M. Donnelly, J.-S. Poirier, and J. Margot, J. Phys. D: Appl. Phys. 42, 055206 (2009). 10.1088/0022-3727/42/5/055206
- (2009) J. Phys. D: Appl. Phys. , vol.42 , pp. 055206
- Stafford, L.¹ Khare, R.² Guha, J.³ Donnelly, V.M.⁴ Poirier, J.-S.⁵ Margot, J.⁶

8
- 0032359757
- Effects of wall recombination on the etch rate and plasma composition of an etch reactor
- DOI 10.1116/1.581310
- G. I. Font, I. D. Boyd, and J. Balakrishnan, J. Vac. Sci. Technol. A 16, 2057 (1998). 10.1116/1.581310 (Pubitemid 128106743)
- (1998) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.16 , Issue.4 , pp. 2057-2064
- Font, G.I.¹ Boyd, I.D.² Balakrishnan, J.³

9
- 0041529709
- 10.1116/1.1579015
- W. D. Jin and H. H. Sawin, J. Vac. Sci. Technol. A 21, 911 (2003). 10.1116/1.1579015
- (2003) J. Vac. Sci. Technol. A , vol.21 , pp. 911
- Jin, W.D.¹ Sawin, H.H.²

10
- 0000725541
- 10.1116/1.588822
- M. Tuda, K. Ono, and K. Nishikawa, J. Vac. Sci. Technol. B 14, 3291 (1996). 10.1116/1.588822
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 3291
- Tuda, M.¹ Ono, K.² Nishikawa, K.³

11
- 0032340434
- Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon
- DOI 10.1116/1.580974
- J. P. Chang, A. P. Mahorowala, and H. H. Sawin, J. Vac. Sci. Technol. A 16, 217 (1998). 10.1116/1.580974 (Pubitemid 128020228)
- (1998) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.16 , Issue.1 , pp. 217-224
- Chang, J.P.¹ Mahorowala, A.P.² Sawin, H.H.³

12
- 0035998536
- 2 and HBr discharges: III. Photoresist mask faceting, sidewall deposition, and microtrenching
- DOI 10.1116/1.1481868
- A. P. Mahorowala and H. H. Sawin, J. Vac. Sci. Technol. B 20, 1077 (2002). 10.1116/1.1481868 (Pubitemid 34751298)
- (2002) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.20 , Issue.3 , pp. 1077-1083
- Mahorowala, A.P.¹ Sawin, H.H.²

13
- 85026341102
- Influence of the reactor wall composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: II. during silicon etching
- DOI 10.1063/1.2803881
- G. Cunge, N. Sadeghi, and R. Ramos, J. Appl. Phys. 102, 093305 (2007). 10.1063/1.2803881 (Pubitemid 350128991)
- (2007) Journal of Applied Physics , vol.102 , Issue.9 , pp. 093305
- Cunge, G.¹ Sadeghi, N.² Ramos, R.³

14
- 36249004278
- Influence of the reactor wall composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: I. Without silicon etching
- DOI 10.1063/1.2803880
- G. Cunge, N. Sadeghi, and R. Ramos, J. Appl. Phys. 102, 093304 (2007). 10.1063/1.2803880 (Pubitemid 350128990)
- (2007) Journal of Applied Physics , vol.102 , Issue.9 , pp. 093304
- Cunge, G.¹ Sadeghi, N.² Ramos, R.³

15
- 0036494223
- 2 plasma etching of Si
- DOI 10.1116/1.1450578
- S. J. Ullal, H. Singh, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 20, 499 (2002). 10.1116/1.1450578 (Pubitemid 34405119)
- (2002) Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films , vol.20 , Issue.2 , pp. 499-506
- Ullal, S.J.¹ Singh, H.² Vahedi, V.³ Aydil, E.S.⁴

16
- 0038274546
- 10.1116/1.1562176
- S. J. Ullal, T. W. Kim, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 21, 589 (2003). 10.1116/1.1562176
- (2003) J. Vac. Sci. Technol. A , vol.21 , pp. 589
- Ullal, S.J.¹ Kim, T.W.² Vahedi, V.³ Aydil, E.S.⁴

17
- 0038783294
- 10.1149/1.1578481
- T. W. Kim and E. S. Aydil, J. Electrochem. Soc. 150, G418 (2003). 10.1149/1.1578481
- (2003) J. Electrochem. Soc. , vol.150 , pp. 418
- Kim, T.W.¹ Aydil, E.S.²

18
- 0002352541
- 10.1116/1.587107
- K. Blumenstock, J. Theisen, P. Pan, J. Dulak, A. Ticknor, and T. Sandwick, J. Vac. Sci. Technol. B 12, 54 (1994). 10.1116/1.587107
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 54
- Blumenstock, K.¹ Theisen, J.² Pan, P.³ Dulak, J.⁴ Ticknor, A.⁵ Sandwick, T.⁶

19
- 0032652261
- 10.1109/55.778149
- S.-H. Pyi, I.-S. Yeo, D.-H. Weon, Y.-B. Kim, and S.-K. Lee, IEEE Electron Device Lett. 20, 384 (1999). 10.1109/55.778149
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 384
- Pyi, S.-H.¹ Yeo, I.-S.² Weon, D.-H.³ Kim, Y.-B.⁴ Lee, S.-K.⁵

20
- 0032116994
- 10.1143/JJAP.37.3889
- H.-S. Lee, B. J. Jun, D.-D. Lee, K.-H. Baik, and Y.-S. Seol, Jpn. J. Appl. Phys., Part 1 37, 3889 (1998). 10.1143/JJAP.37.3889
- (1998) Jpn. J. Appl. Phys., Part 1 , vol.37 , pp. 3889
- Lee, H.-S.¹ Jun, B.J.² Lee, D.-D.³ Baik, K.-H.⁴ Seol, Y.-S.⁵

21
- 0031122753
- 10.1143/JJAP.36.L518
- M. Tuda and K. Ono, Jpn. J. Appl. Phys., Part 2 36, L518 (1997). 10.1143/JJAP.36.L518
- (1997) Jpn. J. Appl. Phys., Part 2 , vol.36 , pp. 518
- Tuda, M.¹ Ono, K.²

22
- 0031119548
- 10.1143/JJAP.36.2482
- M. Tuda and K. Ono, Jpn. J. Appl. Phys., Part 1 36, 2482 (1997). 10.1143/JJAP.36.2482
- (1997) Jpn. J. Appl. Phys., Part 1 , vol.36 , pp. 2482
- Tuda, M.¹ Ono, K.²

23
- 0034187472
- 10.1116/1.582264
- C. W. Chung and I. Chung, J. Vac. Sci. Technol. A 18, 835 (2000). 10.1116/1.582264
- (2000) J. Vac. Sci. Technol. A , vol.18 , pp. 835
- Chung, C.W.¹ Chung, I.²

24
- 0032336854
- x with chlorine
- DOI 10.1116/1.581330
- G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 16, 2215 (1998). 10.1116/1.581330 (Pubitemid 128106765)
- (1998) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.16 , Issue.4 , pp. 2215-2221
- Kota, G.P.¹ Goburn, J.W.² Graves, D.B.³

25
- 0037361662
- 10.1016/S0167-9317(02)00962-0
- H. W. Kim, B. S. Ju, and C. J. Kang, Microelectron. Eng. 65, 319 (2003). 10.1016/S0167-9317(02)00962-0
- (2003) Microelectron. Eng. , vol.65 , pp. 319
- Kim, H.W.¹ Ju, B.S.² Kang, C.J.³

26
- 0037364982
- 10.1016/S0167-9317(02)00902-4
- H.-W. Kim, B.-S. Ju, C.-J. Kang, and J.-T. Moon, Microelectron. Eng. 65, 285 (2003). 10.1016/S0167-9317(02)00902-4
- (2003) Microelectron. Eng. , vol.65 , pp. 285
- Kim, H.-W.¹ Ju, B.-S.² Kang, C.-J.³ Moon, J.-T.⁴

27
- 0029273243
- 10.1116/1.588355
- K. V. Guinn, C. C. Cheng, and V. M. Donnelly, J. Vac. Sci. Technol. B 13, 214 (1995). 10.1116/1.588355
- (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 214
- Guinn, K.V.¹ Cheng, C.C.² Donnelly, V.M.³

28
- 0032067089
- 10.1143/JJAP.37.2634
- E.-J. Lee, J.-W. Kim, and W.-J. Lee, Jpn. J. Appl. Phys., Part 1 37, 2634 (1998). 10.1143/JJAP.37.2634
- (1998) Jpn. J. Appl. Phys., Part 1 , vol.37 , pp. 2634
- Lee, E.-J.¹ Kim, J.-W.² Lee, W.-J.³

29
- 0034315725
- 2 high density plasmas
- DOI 10.1116/1.1310655
- S. A. Vitale, H. Chae, and H. H. Sawin, J. Vac. Sci. Technol. A 18, 2770 (2000). 10.1116/1.1310655 (Pubitemid 32033103)
- (2000) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.18 , Issue.6 , pp. 2770-2778
- Vitale, S.A.¹ Chae, H.² Sawin, H.H.³

30
- 55149089274
- 10.1143/JJAP.47.6938
- H. Y. Jung, H. J. Lee, B. S. Kwon, J. H. Park, C. Lee, J. Ahn, J. Lee, and N.-E. Lee, Jpn. J. Appl. Phys. 47, 6938 (2008). 10.1143/JJAP.47.6938
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 6938
- Jung, H.Y.¹ Lee, H.J.² Kwon, B.S.³ Park, J.H.⁴ Lee, C.⁵ Ahn, J.⁶ Lee, J.⁷ Lee, N.-E.⁸

31
- 0000907366
- 10.1116/1.584938
- S. C. McNevin, J. Vac. Sci. Technol. B 8, 1185 (1990). 10.1116/1.584938
- (1990) J. Vac. Sci. Technol. B , vol.8 , pp. 1185
- McNevin, S.C.¹

32
- 0027554488
- 10.1143/JJAP.32.1253
- T. Morimoto, Jpn. J. Appl. Phys., Part 1, 32, 1253 (1993). 10.1143/JJAP.32.1253
- (1993) Jpn. J. Appl. Phys., Part 1 , vol.32 , pp. 1253
- Morimoto, T.¹

33
- 84865456379
- K. Ono and M. Tuda, 13th International Symposium on Plasma Chemistry, Beijing, China, 18-22 August 1997 (unpublished).
- (1997) 13th International Symposium on Plasma Chemistry, Beijing, China, 18-22 August (Unpublished).
- Ono, K.¹ Tuda, M.²

34
- 84865450055
- (unpublished)
- J.-P. Booth, N. Sirse, P. Chabert, Y. Azamoum, and M. Z. u. Islam, 30th ICPIG, Belfast, Northern Ireland, UK, 28 August-2 September 2011 (unpublished).
- (2011) 30th ICPIG, Belfast, Northern Ireland, UK, 28 August-2 September
- Booth, J.-P.¹ Sirse, N.² Chabert, P.³ Azamoum, Y.⁴

35
- 84865448306
- 10.1116/1.4742319
- R. Khare, A. Srivastava, and V. M. Donnelly, J. Vac. Sci. Technol. A 30, 051306 (2012). 10.1116/1.4742319
- (2012) J. Vac. Sci. Technol. A , vol.30 , pp. 051306
- Khare, R.¹ Srivastava, A.² Donnelly, V.M.³

36
- 34248586638
- Auger electron spectroscopy of surfaces during exposure to gaseous discharges
- DOI 10.1116/1.2699167
- J. Guha, Y.-K. Pu, and V. M. Donnelly, J. Vac. Sci. Technol. A 25, 347 (2007). 10.1116/1.2699167 (Pubitemid 46747683)
- (2007) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.25 , Issue.2 , pp. 347-352
- Guha, J.¹ Pu, Y.-K.² Donnelly, V.M.³

37
- 67649498083
- 10.1063/1.3143107
- J. Guha, R. Khare, L. Stafford, V. M. Donnelly, S. Sirard, and E. A. Hudson, J. Appl. Phys. 105, 113309 (2009). 10.1063/1.3143107
- (2009) J. Appl. Phys. , vol.105 , pp. 113309
- Guha, J.¹ Khare, R.² Stafford, L.³ Donnelly, V.M.⁴ Sirard, S.⁵ Hudson, E.A.⁶

38
- 53549088610
- 10.1021/jp800788a
- J. Guha, P. Kurunczi, L. Stafford, and V. M. Donnelly, J. Phys. Chem. C 112, 8963 (2008). 10.1021/jp800788a
- (2008) J. Phys. Chem. C , vol.112 , pp. 8963
- Guha, J.¹ Kurunczi, P.² Stafford, L.³ Donnelly, V.M.⁴

39
- 0036147842
- Determination of temperature jump coefficient using the direct simulation Monte Carlo method
- DOI 10.1088/0960-1317/12/1/307, PII S0960131702266425
- L. S. Pan, T. Y. Ng, D. Xu, G. R. Liu, and K. Y. Lam, J. Micromech. Microeng. 12, 41 (2002). 10.1088/0960-1317/12/1/307 (Pubitemid 34096724)
- (2002) Journal of Micromechanics and Microengineering , vol.12 , Issue.1 , pp. 41-52
- Pan, L.S.¹ Ng, T.Y.² Xu, D.³ Liu, G.R.⁴ Lam, K.Y.⁵

40
- 84865485076
- NIST-JANAF Thermodynamic Tables.
- NIST-JANAF Thermodynamic Tables, http://kinetics.nist.gov/janaf/.

41
- 0000813779
- 2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy
- DOI 10.1116/1.581189
- V. M. Donnelly and N. Layadi, J. Vac. Sci. Technol. A 16, 1571 (1998). 10.1116/1.581189 (Pubitemid 128091435)
- (1998) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.16 , Issue.3 , pp. 1571-1576
- Donnelly, V.M.¹ Layadi, N.²

42
- 0026628527
- 10.1149/1.2069179
- G. C. H. Zau and H. H. Sawin, J. Electrochem. Soc. 139, 250 (1992). 10.1149/1.2069179
- (1992) J. Electrochem. Soc. , vol.139 , pp. 250
- Zau, G.C.H.¹ Sawin, H.H.²

43
- 0025517066
- 10.1149/1.2086262
- G. C. H. Zau, L. D. Baston, D. C. Gray, I. Tepermeister, H. H. Sawin, and M. T. Mocella, J. Electrochem. Soc. 137, 3526 (1990). 10.1149/1.2086262
- (1990) J. Electrochem. Soc. , vol.137 , pp. 3526
- Zau, G.C.H.¹ Baston, L.D.² Gray, D.C.³ Tepermeister, I.⁴ Sawin, H.H.⁵ Mocella, M.T.⁶

44
- 79952034604
- 10.1116/1.3517478
- V. M. Donnelly, J. Guha, and L. Stafford, J. Vac. Sci. Technol. A 29, 010801 (2011). 10.1116/1.3517478
- (2011) J. Vac. Sci. Technol. A , vol.29 , pp. 010801
- Donnelly, V.M.¹ Guha, J.² Stafford, L.³

45
- 0026373165
- 10.1021/la00060a016
- Y. C. Kim and M. Boudart, Langmuir 7, 2999 (1991). 10.1021/la00060a016
- (1991) Langmuir , vol.7 , pp. 2999
- Kim, Y.C.¹ Boudart, M.²

46
- 35348873215
- Analytical model of heterogeneous atomic recombination on silicalike surfaces
- DOI 10.1109/TPS.2007.902028, Special Issue on Modeling and Simulation of Collisional Low-Temperature Plasmas
- V. Guerra, IEEE Trans. Plasma Sci. 35, 1397 (2007). 10.1109/TPS.2007. 902028 (Pubitemid 47577851)
- (2007) IEEE Transactions on Plasma Science , vol.35 , Issue.5 , pp. 1397-1412
- Guerra, V.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.