SCOPUS 정보 검색 플랫폼

Volumn 65, Issue 3, 2003, Pages 285-292

Patterning of W/WNx/poly-Si gate electrode using Cl2/O2 plasmas

Author keywords

Etching; Metal gate; Temperature; Tungsten

Indexed keywords

ELECTRODES; ETCHING; PLASMA APPLICATIONS; TUNGSTEN COMPOUNDS;

METAL GATE ELECTRODES;

POLYSILICON;

EID: 0037364982 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(02)00902-4 Document Type: Article

Times cited : (5)

References (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.