Effects of chamber wall conditions on Cl concentration and Si etch rate uniformity in plasma etching reactors

Journal of the Electrochemical Society

Volumn 150, Issue 7, 2003, Pages

  Kim, Tae Won ^a   Aydil, Eray S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHLORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; INFRARED RADIATION; SILICON WAFERS;

ETCH RATE; ION FLUX DISTRIBUTIONS; PLASMA ETCHING REACTORS; SILICON OXYCHLORIDE FILM;

PLASMA ETCHING;

EID: 0038783294     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1578481     Document Type: Article

References (38)

1. J. L. Cecchi, J. E. Stevens, R. L. Jarecki, Jr., and Y. C. Huang, J. Vac. Sci. Technol. B, 9, 318 (1991).
2. J. Y. Choe, I. P. Herman, and V. M. Donnelly, J. Vac. Sci. Technol. A, 15, 3024 (1997).
3. G. I. Font, I. D. Boyd, and J. Balakrishnan, J. Vac. Sci. Technol. A, 16, 2057 (1998).
4. E. Meeks, J. W. Shon, Y. Ra, and P. Jones, J. Vac. Sci. Technol. A, 13, 2884 (1995).
5. J. A. O'Neill and J. Singh, J. Appl. Phys., 77, 497 (1995).
6. M. Schaepkens, R. C. M. Bosch, T. E. F. Standaert, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. A, 16, 2099 (1998).
7. S. J. Ullal, A. R. Godfrey, L. Braley, E. A. Edelberg, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A, 20, 43 (2002).
8. S. Xu, Z. Sun, X. Qian, J. Holland, and D. Podlesnik, J. Vac. Sci. Technol. B, 19, 166 (2001).
9. G. C. H. Zau, L. D. Baston, D. C. Gray, I. Tepermeister, H. H. Sawin, and M. T. Mocella, J. Electrochem. Soc., 137, 3526 (1990).
10. G. C. H. Zau and H. H. Sawin, J. Electrochem. Soc., 139, 250 (1992).
11. B. A. Cruden, M. V. V. S. Rao, S. P. Sharma, and M. Meyyappan, J. Vac. Sci. Technol. B, 20, 353 (2002).
12. J. Hong, J. W. Lee, C. J. Santana, C. R. Abernathy, E. S. Lambers, S. J. Pearton, W. S. Hobson, and F. Ren, Solid-State Electron., 39, 1109 (1996).
13. A. R. Godfrey, S. J. Ullal, L. Braly, E. A. Edelberg, V. Vahedi, and E. S. Aydil, Rev. Sci. Instrum., 72, 3260 (2001).
14. S. J. Ullal, H. Singh, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A, 20, 499 (2002).
15. T. W. Kim, S. J. Ullal, V. Vahedi, and E. S. Aydil, Rev. Sci. Instrum., 73, 3494 (2002).
16. J. P. Chang and H. H. Sawin, J. Vac. Sci. Technol. A, 16, 610 (1997).
17. C. Cheng, A. K. V. Guinn, and V. M. Donnelly, J. Vac. Sci. Technol. B, 14, 85 (1996).
18. C. C. Cheng, K. V. Guinn, I. P. Herman, and V. M. Donnelly, J. Vac. Sci. Technol. A, 13, 1970 (1995).
19. S. A. Vitale, H. Chae, and H. H. Sawin, J. Vac. Sci. Technol. A, 19, 2197 (2001).
20. J. A. Levinson, E. S. G. Shaqfeh, M. Balooch, and A. V. Hamza, J. Vac. Sci. Technol. A, 15, 1902 (1997).
21. J. A. Levinson, E. S. G. Shaqfeh, M. Balooch, and A. V. Hamza, J. Vac. Sci. Technol. B, 18, 172 (2000).
22. G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A, 16, 270 (1998).
23. N. J. Harrick, Internal Reflection Spectroscopy, Interscience Publishers, New York (1967).
24. Y. J. Chabal, Surf. Sci. Rep., 8, 211 (1988).
25. J. C. Davis, Statistics and Data Analysis in Geology, 2nd ed., John Wiley, New York, (1986).
26. D. P. Lymberopoulos and D. J. Economou, IEEE Trans. Plasma Sci., 23, 573 (1995).
27. D. J. Economou, P. Sang-Kyu, and G. D. Williams, J. Electrochem. Soc., 136, 188 (1989).
28. J. P. Chang, A. P. Mahorowala, and H. H. Sawin, J. Vac. Sci. Technol. A, 16, 217 (1998).
29. J. P. Chang, J. C. Arnold, G. C. H. Zau, S. Hyung-Shik, and H. H. Sawin, J. Vac. Sci. Technol. A, 15, 1853 (1997).
30. C. Lee and M. A. Lieberman, J. Vac. Sci. Technol. A, 13, 368 (1995).
31. D. L. Flamm, J. Vac. Sci. Technol. A, 4, 729 (1986).
32. J. Ping and D. J. Economou, J. Appl. Phys., 73, 8151 (1993).
33. A. Szabo, P. D. Farrall, and T. Engel, Surf. Sci., 312, 284 (1994).
34. T. W. Kim and E. S. Aydil, Unpublished.
35. C. T. Kirk, Phys. Rev. B, 38, 1255 (1988).
36. S. M. Han and E. S. Aydil, J. Vac. Sci. Technol. A, 15, 2893 (1997).
37. M. J. Kushner, W. Z. Collison, M. J. Grapperhaus, J. P. Holland, and M. S. Barnes, J. Appl. Phys., 80, 1337 (1996).
38. T. Panagopoulos, K. Doosik, V. Midha, and D. Economou, J. Appl. Phys., 91, 2687 (2002).