High-rate Ru electrode etching using O2/Cl2 inductively coupled plasma

Microelectronic Engineering

Volumn 65, Issue 3, 2003, Pages 319-326

  Kim, Hyoun Woo ^a   Ju, Byong Sun ^b   Kang, Chang Jin ^b  

^a Inha University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Etching; ICP; Ru; Transmission electron microscopy

Indexed keywords

ELECTRODES; ETCHING; RUTHENIUM; TRANSMISSION ELECTRON MICROSCOPY;

ETCH RATES;

INDUCTIVELY COUPLED PLASMA;

EID: 0037361662     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00962-0     Document Type: Article

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