Effect of additive gases on dimension control during Cl2-based polysilicon gate etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 7, 1998, Pages 3889-3893

  Lee, Ho Seok ^a   Jun, Bum Jin ^a   Lee, Dong Duk ^a   Baik, Ki Ho ^a   Seol, Yeo Song ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Additive gas; Bias power; Chlorine; Etch profile; Pattern transfer; Polysilicon etching; Sidewall passivation

Indexed keywords

CHLORINE; PASSIVATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

ADDITIVE GAS; PATTERN TRANSFER;

ETCHING;

EID: 0032116994     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3889     Document Type: Article

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