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Volumn 36, Issue 4 B, 1997, Pages
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Observation of microscopic nonuniformity during overetch in polysilicon gate etching
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
ASPECT RATIO;
ATOMIC FORCE MICROSCOPY;
CHLORINE;
ELECTRON CYCLOTRON RESONANCE;
GATES (TRANSISTOR);
MICROSTRUCTURE;
OXYGEN;
PLASMA ETCHING;
REACTIVE ION ETCHING;
SCANNING ELECTRON MICROSCOPY;
ELECTRON CYCLOTRON RESONANCE PLASMA ETCHING;
MICROSCOPIC UNIFORMITY;
NEUTRAL SHADOWING;
NEUTRAL TRANSPORT;
OVERETCHING;
POLYSILICON GATE ETCHING;
SEMICONDUCTING SILICON;
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EID: 0031122753
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.l518 Document Type: Article |
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Times cited : (8)
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References (9)
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