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Volumn 105, Issue 11, 2009, Pages

Effect of Cu contamination on recombination of O atoms on a plasma-oxidized silicon surface

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROMETERS; CHAMBER WALLS; CU LAYERS; CYLINDRICAL SUBSTRATE; DUAL DAMASCENE; ETCHING RATE; EVAPORATION SOURCE; FREE SURFACES; IN-SITU; INTEGRATION SCHEME; LANGMUIR-HINSHELWOOD; LAST STAGE; OUT-DIFFUSION; OXIDATION STATE; OXIDIZED SILICON; OXYGEN PLASMAS; PLASMA EXPOSURE; PRESSURE GAUGES; PRESSURE RISE; REACTOR WALLS; RECOMBINATION COEFFICIENT; RECOMBINATION RATE; REDOX CYCLING; ROOM TEMPERATURE; STICKING COEFFICIENTS;

EID: 67649498083     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3143107     Document Type: Article
Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.