Reactive ion etching mechanism of RuO2 thin films in oxygen plasma with the addition of CF4, Cl2, and N2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 5 A, 1998, Pages 2634-2641

  Lee, Eung Jik ^a   Kim, Jin Woong ^b   Lee, Won Jong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Electron cyclotron resonance; Etching; Optical emission spectroscopy; Plasma; Quadrupole mass spectrometer; Ruthenium dioxide (RuO2); X ray photoelectron spectroscopy

Indexed keywords

CYCLOTRON RESONANCE; MASS SPECTROMETERS; OXIDES; PLASMA ETCHING; PLASMAS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL EMISSION SPECTROSCOPY;

RUTHENIUM COMPOUNDS;

EID: 0032067089     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2634     Document Type: Article

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