Effect of O2 gas during inductively coupled O 2/Cl2 plasma etching of Mo and HfO2 for gate stack patterning

Japanese Journal of Applied Physics

Volumn 47, Issue 8 PART 3, 2008, Pages 6938-6942

  Jung, Ho Young ^a   Lee, Hag Joo ^a   Kwon, Bong Soo ^a   Park, Jung Ho ^b   Lee, Chiyoung ^c   Ahn, Jinho ^b   Lee, Jaegab ^c   Lee, Nae Eung ^a  

^a Sungkyunkwan University   (South Korea)

^b Hanyang University   (South Korea)

^c Kookmin University   (South Korea)

Author keywords

HfO2; Inductively coupled plasma (ICP); Metal gate stack; Mo; Plasma etching

Indexed keywords

CHLORINE; ETCHING; HAFNIUM; HAFNIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; LOGIC GATES; PHOTORESISTS; PHYSICAL VAPOR DEPOSITION; PLASMA ETCHING; PLASMAS; PRASEODYMIUM COMPOUNDS; RATE CONSTANTS; STRUCTURAL METALS;

ETCH RATES; ETCH SELECTIVITIES; ETCHING CHARACTERISTICS; ETCHING REACTIONS; FLOW RATIOS; GATE STACK PATTERNING; HFO2; METAL GATE STACK; MO; PROCESS PARAMETERS; SELF-BIAS VOLTAGES; SINGLE LAYERS; STACKED STRUCTURES;

MOLYBDENUM;

EID: 55149089274     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.6938     Document Type: Article

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