Strain-induced performance improvements in InAs nanowire tunnel FETs

IEEE Transactions on Electron Devices

Volumn 59, Issue 8, 2012, Pages 2085-2092

  Conzatti, F ^a,b   Pala, M G ^b   Esseni, D ^a   Bano, E ^b   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b IMEP LAHC   (France)

Author keywords

InAs; k p; nanowires; non equilibrium Green's functions; strain; Tunnel FET

Indexed keywords

ELECTRICAL PERFORMANCE; INAS; NON-EQUILIBRIUM GREEN'S FUNCTION; NONEQUILIBRIUM GREEN FUNCTION FORMALISMS; SELF-CONSISTENT BORN APPROXIMATION; STRAIN CONDITIONS; STRAIN-INDUCED PERFORMANCE; STRAINED SILICON MOSFETS; SUBTHRESHOLD SLOPE; TUNNEL-FET;

DEGRADATION; GREEN'S FUNCTION; HAMILTONIANS; MOSFET DEVICES; NANOWIRES; STRAIN;

INDIUM ARSENIDE;

EID: 84864745350     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2200253     Document Type: Article

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