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Volumn 107, Issue 8, 2010, Pages

Simulation of nanowire tunneling transistors: From the Wentzel-Kramers- Brillouin approximation to full-band phonon-assisted tunneling

(2) Luisier, Mathieu a Klimeck, Gerhard a

a Purdue University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; BRILLOUIN; DIRECT BAND GAP SEMICONDUCTORS; FULL BAND; PHONON ASSISTED TUNNELING; QUANTUM TRANSPORT; SI AND GE NANOWIRES; TIGHTLY-COUPLED; TUNNELING PROCESS; WKB APPROXIMATIONS;

APPROXIMATION THEORY; ELECTRIC CIRCUIT BREAKERS; ELECTRON MOBILITY; GERMANIUM; NANOWIRES; PHONONS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 77952416438 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3386521 Document Type: Article

Times cited : (177)

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