SCOPUS 정보 검색 플랫폼

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

A simulation study of strain induced performance enhancements in InAs nanowire tunnel-FETs

(5) Conzatti, F a,b Pala, M G b Esseni, D a Bano, E b Selmi, L a

a UNIVERSITY OF UDINE (Italy)

b IMEP LAHC (France)

Author keywords

[No Author keywords available]

Indexed keywords

INAS; MOSFETS; SELF-CONSISTENT BORN APPROXIMATION; SIMULATION STUDIES; STRAIN CONDITIONS; STRAIN ENGINEERING; STRAIN-INDUCED PERFORMANCE; SUBTHRESHOLD SLOPE;

ELECTRON DEVICES; INDIUM ARSENIDE; NANOWIRES;

MESFET DEVICES;

EID: 84857001671 PISSN: 01631918 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2011.6131492 Document Type: Conference Paper

Times cited : (23)

References (22)

1
- 66449119228
- online
- ITRS Roadmap 2009, online, www.itrs.net/Links/2009ITRS
- (2009) ITRS Roadmap

2
- 34547850370
- W. Y. Choi et al., IEEE EDL, Vol. 28, p. 743, 2007
- (2007) IEEE EDL , vol.28 , pp. 743
- Choi, W.Y.¹

3
- 78650034452
- A. C. Seabaugh et al., Proceedings of the IEEE, Vol. 98, p. 2095, 2010
- (2010) Proceedings of the IEEE , vol.98 , pp. 2095
- Seabaugh, A.C.¹

4
- 34447321846
- K. Boucart et al., IEEE TED, Vol. 54, p. 1725, 2007
- (2007) IEEE TED , vol.54 , pp. 1725
- Boucart, K.¹

5
- 34547697110
- A. S. Verhulst et al., Appl. Phys. Lett., Vol. 91, p. 053102, 2007
- (2007) Appl. Phys. Lett. , vol.91 , pp. 053102
- Verhulst, A.S.¹

6
- 67650683613
- F. Mayer et al., IEDM Tech. Dig., p. 163, 2008
- (2008) IEDM Tech. Dig. , pp. 163
- Mayer, F.¹

7
- 67650618284
- T. Krishnamohan et al., IEDM Tech. Dig., p. 947, 2008
- (2008) IEDM Tech. Dig. , pp. 947
- Krishnamohan, T.¹

8
- 67649373007
- M. Luisier et al., IEEE EDL, Vol. 30, p. 602, 2009
- (2009) IEEE EDL , vol.30 , pp. 602
- Luisier, M.¹

9
- 77950089187
- J. Knoch et al., IEEE EDL, Vol. 31, p. 305, 2010
- (2010) IEEE EDL , vol.31 , pp. 305
- Knoch, J.¹

10
- 78649988576
- S. O. Koswatta et al., IEEE TED, Vol. 57, p. 3222, 2010
- (2010) IEEE TED , vol.57 , pp. 3222
- Koswatta, S.O.¹

11
- 19744366972
- J. Appenzeller et al., Phys. Rev. Lett., Vol. 93, p. 196805, 2004
- (2004) Phys. Rev. Lett. , vol.93 , pp. 196805
- Appenzeller, J.¹

12
- 37749030898
- S. Poli et al., IEEE TED, Vol. 55, p. 313, 2008
- (2008) IEEE TED , vol.55 , pp. 313
- Poli, S.¹

13
- 62749117201
- S. O. Koswatta et al., IEEE TED, Vol. 56, p. 456, 2009
- (2009) IEEE TED , vol.56 , pp. 456
- Koswatta, S.O.¹

14
- 56549113551
- S. Poli et al., IEEE TED, Vol. 55, p. 2968, 2008
- (2008) IEEE TED , vol.55 , pp. 2968
- Poli, S.¹

15
- 35949009591
- T. B. Bahder, Phys. Rev. B, Vol. 41, p. 11992, 1990
- (1990) Phys. Rev. B , vol.41 , pp. 11992
- Bahder, T.B.¹

16
- 35649016635
- R. Veprek et al., Phys. Rev. B, Vol.76, p.165320, 2007
- (2007) Phys. Rev. B , vol.76 , pp. 165320
- Veprek, R.¹

17
- 70349342821
- M. Shin, JAP, Vol. 106, p. 054505, 2009
- (2009) JAP , vol.106 , pp. 054505
- Shin, M.¹

18
- 0035356466
- I. Vurgaftman et al., JAP, Vol. 89, p. 5815, 2001
- (2001) JAP , vol.89 , pp. 5815
- Vurgaftman, I.¹

19
- 84932184489
- Cambridge Univ. Press
- D. Esseni et al., "Nanoscale MOS Transistors", Cambridge Univ. Press, 2011.
- (2011) Nanoscale MOS Transistors
- Esseni, D.¹

20
- 70350584509
- S. Poli et al., IEEE EDL, Vol. 30, p. 1212, 2009
- (2009) IEEE EDL , vol.30 , pp. 1212
- Poli, S.¹

21
- 64949171676
- M. V. Fischetti et al., IEEE TED, p. 634, 1991
- (1991) IEEE TED , pp. 634
- Fischetti, M.V.¹

22
- 77952416438
- M. Luisier et al., JAP, Vol. 107, p. 084507, 2010
- (2010) JAP , vol.107 , pp. 084507
- Luisier, M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.