Atomistic full-band design study of InAs band-to-band tunneling field-effect transistors

IEEE Electron Device Letters

Volumn 30, Issue 6, 2009, Pages 602-604

  Luisier, Mathieu ^a   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

Author keywords

Band to band tunneling (BTBT) transistors; Full band and atomistic quantum transport; Subthreshold swing (SS); Tight binding

Indexed keywords

ATOMISTIC MODELING; BAND TO BAND TUNNELING; BAND-TO-BAND TUNNELING (BTBT) TRANSISTORS; CONVENTIONAL METALS; DESIGN STUDIES; ELECTROSTATIC POTENTIALS; FULL BAND; FULL-BAND AND ATOMISTIC QUANTUM TRANSPORT; GATE CONTACT; GATE LENGTH; INAS; ON CURRENTS; ROOM TEMPERATURE; SUBTHRESHOLD SWING; SUBTHRESHOLD SWING (SS); TIGHT-BINDING; ULTRA-THIN-BODY;

DENSITY (SPECIFIC GRAVITY); ELECTROSTATIC DEVICES; GALERKIN METHODS; GALLIUM ALLOYS; GATES (TRANSISTOR); INDIUM ARSENIDE; MESFET DEVICES; MOSFET DEVICES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; TUNNELING (EXCAVATION);

FIELD EFFECT TRANSISTORS;

EID: 67649373007     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2020442     Document Type: Article

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