Redox-active monolayers in mesoporous silicon

Journal of Physical Chemistry C

Volumn 116, Issue 30, 2012, Pages 16080-16088

  Ciampi, Simone ^a   Guan, Bin ^a   Darwish, Nadim ^a   Reece, Peter J ^a   Gooding, J Justin ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS ENVIRONMENT; CHARGING PROPERTY; CYCLOADDITION REACTION; ELECTROCATALYTIC; ELECTROCHEMICAL REACTIONS; ELECTRON HOLE; FERROCENE DERIVATIVE; INTERFACIAL CAPACITANCE; LAYER CAPACITANCE; MESOPOROUS; MESOPOROUS SILICON; NON-POLAR; OXIDIZING CONDITIONS; P-TYPE; POROUS SEMICONDUCTORS; REDOX-ACTIVE; SILICON ELECTRODE;

ACETYLENE; CYCLOADDITION; IRON COMPOUNDS; MONOLAYERS; ORGANOMETALLICS; POROUS SILICON; REDOX REACTIONS; SEMICONDUCTOR DEVICES;

SILICON;

EID: 84864444495     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp303980x     Document Type: Article

References (122)

1. Herino, R.; Perio, A.; Barla, K.; Bomchil, G. Mater. Lett. 1984, 2, 519-523
2. Bomchil, G.; Halimaoui, A.; Herino, R. Microelectron. Eng. 1988, 8, 293-310
3. Lang, W.; Steiner, P.; Schaber, U.; Richter, A. Sens. Actuators, A 1994, 43, 185-187
4. Kolesar, E. S., Jr.; Bright, V. M.; Sowders, D. M. Thin Solid Films 1995, 270, 10-15
5. Lin, V. S.-Y.; Motesharei, K.; Dancil, K.-P. S.; Sailor, M. J.; Ghadiri, M. R. Science 1997, 278, 840-843
6. Canham, L. T. Appl. Phys. Lett. 1990, 57, 1046-1048
7. Lang, W.; Steiner, P.; Richter, A.; Marusczyk, K.; Weimann, G.; Sandmaier, H. Sens. Actuators, A 1994, 43, 239-242
8. Mlcak, R.; Tuller, H. L.; Greiff, P.; Sohn, J.; Niles, L. Sens. Actuators, A 1994, 40, 49-55
9. Ito, M.; Yamagata, K.; Miyabayashi, H.; Yonehara, T. Scalability potential in ELTRAN SOI-epi wafer. SOI Conference, 2000 IEEE International; Wakefield, MA, 2000; pp 10-11.
10. Uhlir, A., Jr. Bell Syst. Tech. J 1956, 35, 333-347
11. Gupta, P.; Colvin, V. L.; George, S. M. Phys. Rev. B 1988, 37, 8234-8243
12. Imai, K. Solid-State Electron. 1981, 24, 159-164
13. It is now generally believed that the photoluminescence originates from quantum confinement of carriers within silicon nanocrystals. Contributions from surface species, however, are not excluded (see: Brandt, M. S.; Fuchs, H. D.; Stutzmann, M.; Weber, J.; Cardona, M. Solid State Commun. 1992, 81, 307-312)
14. Bisi, O.; Ossicini, S.; Pavesi, L. Surf. Sci. Rep. 2000, 38, 1-126
15. Sailor, M. J.; Link, J. R. Chem. Commun. 2005, 1375-1383
16. Ozanam, F.; Fonseca, C. D.; Venkateswara, A.; Chazalviel, R. J. N. Appl. Spectrosc. 1997, 51, 519-525
17. Lehmann, V.; Stengl, R.; Luigart, A. Mater. Sci. Eng., B 2000, 69-70, 11-22
18. Stewart, M. P.; Buriak, J. M. Adv. Mater. 2000, 12, 859-869
19. Kilian, K. A.; Böcking, T.; Gaus, K.; Gooding, J. J. Angew. Chem., Int. Ed. 2008, 47, 2697-2699
20. Ciampi, S.; Böcking, T.; Kilian, K. A.; Harper, J. B.; Gooding, J. J. Langmuir 2008, 24, 5888-5892
21. Kilian, K. A.; Böcking, T.; Gooding, J. J. Chem. Commun. 2009, 630-640
22. Ilyas, S.; Böcking, T.; Kilian, K. A.; Reece, P. J.; Gooding, J. J.; Gaus, K.; Gal, M. Opt. Mater. 2007, 29, 619-622
23. Böcking, T.; Kilian, K. A.; Gaus, K.; Gooding, J. J. Adv. Funct. Mater. 2008, 18, 3827-3833
24. Kilian, K. A.; Böcking, T.; Gaus, K.; Gal, M.; Gooding, J. J. ACS Nano 2007, 1, 355-361
25. Guan, B.; Magenau, A.; Kilian, K. A.; Ciampi, S.; Gaus, K.; Reece, P. J.; Gooding, J. J. Faraday Discuss. 2011, 149, 301-317
26. Jane, A.; Dronov, R.; Hodges, A.; Voelcker, N. H. Trends Biotechnol. 2009, 27, 230-239
27. Chazalviel, J. N.; Wehrspohn, R. B.; Ozanam, F. Mater. Sci. Eng., B 2000, 69-70, 1-10
28. Zhang, X. G. J. Electrochem. Soc. 2004, 151, C69-C80
29. Kooij, E. S.; Despo, R. W.; Kelly, J. J. Appl. Phys. Lett. 1995, 66, 2552-2554
30. Canham, L. T.; Leong, W. Y.; Beale, M. I. J.; Cox, T. I.; Taylor, L. Appl. Phys. Lett. 1992, 61, 2563-2565
31. Bressers, P. M. M. C.; Knapen, J. W. J.; Meulenkamp, E. A.; Kelly, J. J. Appl. Phys. Lett. 1992, 61, 108-110
32. Halimaoui, A.; Oules, C.; Bomchil, G.; Bsiesy, A.; Gaspard, F.; Herino, R.; Ligeon, M.; Muller, F. Appl. Phys. Lett. 1991, 59, 304-306
33. Billat, S.; Gaspard, F.; Hérino, R.; Ligeon, M.; Muller, F.; Romestain, F.; Vial, J. C. Thin Solid Films 1995, 263, 238-242
34. Ottow, S.; Popkirov, G. S.; Föll, H. J. Electroanal. Chem. 1998, 455, 29-37
35. Ciampi, S.; James, M.; Le Saux, G.; Gaus, K.; Gooding, J. J. J. Am. Chem. Soc. 2012, 134, 844-847
36. Ciampi, S.; Eggers, P. K.; Le Saux, G.; James, M.; Harper, J. B.; Gooding, J. J. Langmuir 2009, 25, 2530-2539
37. Buriak, J. M. Chem. Commun. 1999, 1051-1060
38. Wayner, D.; Wolkow, R. J. Chem. Soc., Perkin Trans. 2 2002, 23-34
39. Buriak, J. M. Chem. Rev. 2002, 102, 1271-1308
40. Boukherroub, R. Curr. Opin. Solid State Mater. Sci. 2005, 9, 66-72
41. Shirahata, N.; Hozumi, A.; Yonezawa, T. Chem. Rec. 2005, 5, 145-159
42. Ciampi, S.; Harper, J. B.; Gooding, J. J. Chem. Soc. Rev. 2010, 39, 2158-2183
43. Li, Y.; Calder, S.; Yaffe, O.; Cahen, D.; Haick, H.; Kronik, L.; Zuilhof, H. Langmuir 2012, 28, 9920-9929
44. Linford, M. R.; Fenter, P.; Eisenberger, P. M.; Chidsey, C. E. D. J. Am. Chem. Soc. 1995, 117, 3145-3155
45. Sieval, A. B.; Demirel, A. L.; Nissink, J. W. M.; Linford, M. R.; van der Maas, J. H.; de Jeu, W. H.; Zuilhof, H.; Sudhölter, E. J. R. Langmuir 1998, 14, 1759-1768
46. Sung, M. M.; Kluth, G. J.; Yauw, O. W.; Maboudian, R. Langmuir 1997, 13, 6164-6168
47. Puniredd, S. R.; Assad, O.; Haick, H. J. Am. Chem. Soc. 2008, 130, 13727-13734
48. Ng, A.; Ciampi, S.; James, M.; Harper, J. B.; Gooding, J. J. Langmuir 2009, 25, 13934-13941
49. Fellah, S.; Boukherroub, R.; Ozanam, F.; Chazalviel, J.-N. Langmuir 2004, 20, 6359-6364
50. Allongue, P.; De Villeneuve, C. H.; Pinson, J.; Ozanam, F.; Chazalviel, J. N.; Wallart, X. Electrochim. Acta 1998, 43, 2791-2798
51. Rijksen, B.; van Lagen, B.; Zuilhof, H. J. Am. Chem. Soc. 2011, 133, 4998-5008
52. Scheres, L.; Arafat, A.; Zuilhof, H. Langmuir 2007, 23, 8343-8346
53. Scheres, L.; Giesbers, M.; Zuilhof, H. Langmuir 2010, 26, 10924-10929
54. Coletti, C.; Marrone, A.; Giorgi, G.; Sgamellotti, A.; Cerofolini, G.; Re, N. Langmuir 2006, 22, 9949-9956
55. Ciampi, S.; Böcking, T.; Kilian, K. A.; James, M.; Harper, J. B.; Gooding, J. J. Langmuir 2007, 23, 9320-9329
56. Guan, B.; Ciampi, S.; Le Saux, G.; Gaus, K.; Reece, P. J.; Gooding, J. J. Langmuir 2011, 27, 328-334
57. Ciampi, S.; Le Saux, G.; Harper, J. B.; Gooding, J. J. Electroanalysis 2008, 20, 1513-1519
58. Ciampi, S.; James, M.; Darwish, N.; Luais, E.; Guan, B.; Harper, J. B.; Gooding, J. J. Phys. Chem. Chem. Phys. 2011, 13, 15624-15632
59. Mawhinney, D. B.; Glass, J. A.; Yates, J. T. J. Phys. Chem. B 1997, 101, 1202-1206
60. Buriak, J. M.; Stewart, M. P.; Geders, T. W.; Allen, M. J.; Choi, H. C.; Smith, J.; Raftery, D.; Canham, L. T. J. Am. Chem. Soc. 1999, 121, 11491-11502
61. Sam, S.; Touahir, L.; Salvador Andresa, J.; Allongue, P.; Chazalviel, J. N.; Gouget-Laemmel, A. C.; Henry de Villeneuve, C.; Moraillon, A.; Ozanam, F.; Gabouze, N.; Djebbar, S. Langmuir 2010, 26, 809-814
62. Borghesi, A.; Guizzetti, G.; Sassella, A.; Bisi, O.; Pavesi, L. Solid State Commun. 1994, 89, 615-618
63. Burrows, V. A.; Chabal, Y. J.; Higashi, G. S.; Raghavachari, K.; Christman, S. B. Appl. Phys. Lett. 1988, 53, 998-1000
64. Borghesi, A.; Sassella, A.; Pivac, B.; Pavesi, L. Solid State Commun. 1993, 87, 1-4
65. Boukherroub, R.; Petit, A.; Loupy, A.; Chazalviel, J.-N.; Ozanam, F. J. Phys. Chem. B 2003, 107, 13459-13462
66. Yablonovitch, E.; Allara, D. L.; Chang, C. C.; Gmitter, T.; Bright, T. B. Phys. Rev. Lett. 1986, 57, 249-252
67. Tischler, M. A.; Collins, R. T.; Stathis, J. H.; Tsang, J. C. Appl. Phys. Lett. 1992, 60, 639-641
68. Petrova, E. A.; Bogoslovskaya, K. N.; Balagurov, L. A.; Kochoradze, G. I. Mater. Sci. Eng., B 2000, 69-70, 152-156
69. Gelloz, B.; Sano, H.; Boukherroub, R.; Wayner, D. D. M.; Lockwood, D. J.; Koshida, N. Appl. Phys. Lett. 2003, 83, 2342-2344
70. Meldal, M.; Tornøe, C. W. Chem. Rev. 2008, 108, 2952-3015
71. Buriak, J. M.; Allen, M. J. J. Am. Chem. Soc. 1998, 120, 1339-1340
72. Bateman, J. E.; Eagling, R. D.; Worrall, D. R.; Horrocks, B. R.; Houlton, A. Angew. Chem., Int. Ed. 1998, 37, 2683-2685
73. Wang, D.; Buriak, J. M. Langmuir 2006, 22, 6214-6221
74. Mauckner, G.; Thonke, K.; Sauer, R. J. Phys.: Condens. Matter 1993, 5, L9
75. Peter, L. M.; Riley, D. J.; Wielgosz, R. I. Appl. Phys. Lett. 1995, 66, 2355-2357
76. -2, see: Faber, E. J.; Sparreboom, W.; Groeneveld, W.; de Smet, L. C. P. M.; Bomer, J.; Olthuis, W.; Zuilhof, H.; Sudhölter, E. J. R.; Bergveld, P.; van den Berg, A. ChemPhysChem 2007, 8, 101-112)
77. Searson, P. C.; Zhang, X. G. J. Electrochem. Soc. 1990, 137, 2539-2546
78. Yu, H.-Z.; Morin, S.; Wayner, D. D. M.; Allongue, P.; Henry de Villeneuve, C. J. Phys. Chem. B 2000, 104, 11157-11161
79. Allongue, P.; Henry de Villeneuve, C.; Pinson, J. Electrochim. Acta 2000, 45, 3241-3248
80. Fabre, B.; Hauquier, F. J. Phys. Chem. B 2006, 110, 6848-6855
81. Zigah, D.; Herrier, C.; Scheres, L.; Giesbers, M.; Fabre, B.; Hapiot, P.; Zuilhof, H. Angew. Chem., Int. Ed. 2010, 49, 3157-3160
82. Marrani, A. G.; Dalchiele, E. A.; Zanoni, R.; Decker, F.; Cattaruzza, F.; Bonifazi, D.; Prato, M. Electrochim. Acta 2008, 53, 3903-3909
83. Devaraj, N. K.; Decreau, R. A.; Ebina, W.; Collman, J. P.; Chidsey, C. E. D. J. Phys. Chem. B 2006, 110, 15955-15962
84. Chidsey, C. E. D.; Bertozzi, C. R.; Putvinski, T. M.; Mujsce, A. M. J. Am. Chem. Soc. 1990, 112, 4301-4306
85. Collman, J. P.; Devaraj, N. K.; Eberspacher, T. P. A.; Chidsey, C. E. D. Langmuir 2006, 22, 2457-2464
86. Liu, G.; Liu, J.; Böcking, T.; Eggers, P. K.; Gooding, J. J. Chem. Phys. 2005, 319, 136-146
87. Fabre, B. Acc. Chem. Res. 2010, 43, 1509-1518
88. Ito, E.; Oji, H.; Araki, T.; Oichi, K.; Ishii, H.; Ouchi, Y.; Ohta, T.; Kosugi, N.; Maruyama, Y.; Naito, T.; Inabe, T.; Seki, K. J. Am. Chem. Soc. 1997, 119, 6336-6344
89. Alfredsson, Y.; Brena, B.; Nilson, K.; Ahlund, J.; Kjeldgaard, L.; Nyberg, M.; Luo, Y.; Martensson, N.; Sandell, A.; Puglia, C.; Siegbahn, H. J. Chem. Phys. 2005, 122, 214723
90. Devadoss, A.; Chidsey, C. E. D. J. Am. Chem. Soc. 2007, 129, 5370-5371
91. Marrani, A. G.; Cattaruzza, F.; Decker, F.; Galloni, P.; Zanoni, R. Electrochim. Acta 2010, 55, 5733-5740
92. Cerofolini, G. F.; Galati, C.; Reina, S.; Renna, L.; Giannazzo, F.; Raineri, V. Surf. Interface Anal. 2004, 36, 71-76
93. Lehner, A.; Steinhoff, G.; Brandt, M. S.; Eickhoff, M.; Stutzmann, M. J. Appl. Phys. 2003, 94, 2289-2294
94. Böcking, T.; Wong, E. L. S.; James, M.; Watson, J. A.; Brown, C. L.; Chilcott, T. C.; Barrow, K. D.; Coster, H. G. L. Thin Solid Films 2006, 515, 1857-1863
95. Baio, J. E.; Weidner, T.; Brison, J.; Graham, D. J.; Gamble, L. J.; Castner, D. G. J. Electron Spectrosc. Relat. Phenom. 2009, 172, 2-8
96. Böcking, T.; James, M.; Coster, H. G. L.; Chilcott, T. C.; Barrow, K. D. Langmuir 2004, 20, 9227-9235
97. A nonnegligible number of C-O bonds exist in monolayers of the diyne 1 prepared on planar Si(100) (see: Ciampi, S.; James, M.; Michaels, P.; Gooding, J. J. Langmuir 2011, 27, 6940-6949). Analogous findings are reported for phenylacetylene monolayers prepared on either H-Si(111) or H-Si(100) surfaces (see ref 58). The structure of the adventitious C-O bond is not fully elucidated, although the contamination has been reported in several other works
98. Kondo, M.; Mates, T. E.; Fischer, D. A.; Wudl, F.; Kramer, E. J. Langmuir 2010, 26, 17000-17012
99. Cerofolini, G. F.; Mascolo, D.; Vlad, M. O. J. Appl. Phys. 2006, 100, 054308
100. Scandurra, A.; Renna, L.; Cerofolini, G.; Pignataro, S. Surf. Interface Anal. 2002, 34, 777-781
101. Cerofolini, G. F.; Galati, C.; Reina, S.; Renna, L. Appl. Phys. A: Mater. Sci. Process. 2005, 80, 161-166
102. Seitz, O.; Böcking, T.; Salomon, A.; Gooding, J. J.; Cahen, D. Langmuir 2006, 22, 6915-6922
103. Himpsel, F. J.; McFeely, F. R.; Taleb-Ibrahimi, A.; Yarmoff, J. A.; Hollinger, G. Phys. Rev. B 1988, 38, 6084-6096
104. Chatgilialoglu, C.; Guarini, A.; Guerrini, A.; Seconi, G. J. Org. Chem. 1992, 57, 2207-2208
105. Webb, L. J.; Nemanick, E. J.; Biteen, J. S.; Knapp, D. W.; Michalak, D. J.; Traub, M. C.; Chan, A. S. Y.; Brunschwig, B. S.; Lewis, N. S. J. Phys. Chem. B 2005, 109, 3930-3937
106. ++ (as well as for n-type) silicon substrates, and reflection FTIR techniques appear to be more suitable for this type of sample (see: Bocking, T.; Kilian, K. A.; Reece, P. J.; Gaus, K.; Gal, M.; Gooding, J. J. Soft Matter 2012, 8, 360-366)
107. Shimei, J.; Yue, W. Spectrochim. Acta, Part A 1999, 55, 1025-1033
108. Daum, P.; Murray, R. W. J. Electroanal. Chem. 1979, 103, 289-294
109. Calvente, J. J.; Andreu, R.; Molero, M.; Lopez-Perez, G.; Dominguez, M. J. Phys. Chem. B 2001, 105, 9557-9568
110. Rowe, G. K.; Creager, S. E. Langmuir 1991, 7, 2307-2312
111. Tajimi, N.; Sano, H.; Murase, K.; Lee, K.-H.; Sugimura, H. Langmuir 2007, 23, 3193-3198
112. Ciampi, S.; James, M.; Michaels, P.; Gooding, J. J. Langmuir 2011, 27, 6940-6949
113. Gooding, J. J.; Ciampi, S. Chem. Soc. Rev. 2011, 40, 2704-2718
114. Cerofolini, G. F.; Galati, C.; Reina, S.; Renna, L.; Viscuso, O.; Condorelli, G. G.; Fragala, I. L. Mater. Sci. Eng. 2003, C23, 989-994
115. Decker, F.; Cattaruzza, F.; Coluzza, C.; Flamini, A.; Marrani, A. G.; Zanoni, R.; Dalchiele, E. A. J. Phys. Chem. B 2006, 110, 7374-7379
116. Morrison, S. R. Electrochemistry at Semiconductor and Oxidized Metal Electrodes; Plenum Press: New York, 1980.
117. Wijesinghe, T. L. S. L.; Li, S. Q.; Blackwood, D. J. J. Phys. Chem. C 2007, 112, 303-307
118. Zhang, X. G. Electrochemistry of Silicon and its Oxide; Kluwer/Plenum: New York, 2001.
119. Kelly, J. J.; van Driel, A. F. The Electrochemistry of Porous Semiconductors. In Electrochemistry at the Nanoscale; Lockwood, D. J., Ed.; Springer: New York, 2009; pp 250-255.
120. Riveros, G.; Meneses, S.; Escobar, S.; Garin, C.; Chornik, B. J. Chil. Chem. Soc. 2010, 55, 61-66
121. van Buuren, T.; Tiedje, T.; Dahn, J. R.; Way, B. M. Appl. Phys. Lett. 1993, 63, 2911-2913
122. Brus, L. E. J. Chem. Phys. 1984, 80, 4403-4409