A model for oxidation kinetics in air at room temperature of hydrogen-terminated (1 0 0) Si

Journal of Applied Physics

Volumn 100, Issue 5, 2006, Pages

  Cerofolini, G F ^a   Mascolo, D ^a   Vlad, M O ^b  

^a STMICROELECTRONICS   (Italy)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL SUBOXIDE; OXIDATION KINETICS; OXIDIZED-SILICON CLUSTERS; STOICHIOMETRIC OXIDE;

DIFFERENTIAL EQUATIONS; OXIDATION; SILICON; SINGLE CRYSTALS; STOICHIOMETRY;

GROWTH KINETICS;

EID: 33748875062     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2245191     Document Type: Article

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