Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds

Applied Physics Letters

Volumn 83, Issue 12, 2003, Pages 2342-2344

  Gelloz, B ^a   Sano, H ^a   Boukherroub, R ^b   Wayner, D D M ^c   Lockwood, D J ^c   Koshida, N ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL RESISTANCE; ELECTROLUMINESCENCE; PASSIVATION; SURFACE PROPERTIES;

SURFACE PASSIVATION;

POROUS SILICON;

EID: 0142026489     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1613812     Document Type: Article

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